SiC Technology Introduced Into Formula E by Rohm Semiconductor
Rohm Semiconductor is introducing a new SiC technology that will be in Formula E. SiC stands for silicon carbide which will be in the first face of the Formula E season which is being held in Hong Kong. Rohm Semiconductor, is partnering up with Venturi Formula E team. This will help in the all-electric racing series. Rohm Semiconductors is planning to use the SiC Technology in order to make their power electronics more efficient, smaller, stronger, and faster.
In terms of smaller, the company plans to reduce size and weight which allows for better weight distributions. In terms of stronger, there will be higher voltages to increase power. This will in turn make things faster and efficient.
Here is what Dr. Kazuhide Ino the General Manager of the Power Device Division at Roh, had to see about this.
"We are very excited to see our technology contribute to Formula E racing cars. We are looking forward to proving the quality and efficiency of our products on the circuit. In the coming years, we should see SiC devices increasingly find their way into power electronics for hybrid and all-electric vehicles, creating simpler and more efficient power systems. By making more economical technologies available for a wide array of industries and larger parts of society, we hope to take a prominent role in revolutionizing energy policy."