ASAP Semiconductor is your sourcing solution for top-quality Infineon Technologies products, presenting highly competitive pricing and rapid lead times on popular part numbers such as IPB25N06S3L-22, BAS 16S H6327, BSC105N10LSF G, SPP08N50C3, BCR 183T E6327, and others. Every Infineon Technologies item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| IPB25N06S3L-22 | fets single | mosfet n-ch 55v 25a d2pak mosfet n-channel metal oxide logic level gate 55v 25a 21.3 mohm @ 17a 10v 2.2v @ 20¦a 47nc @ 10v 2260pf @ 25v 50w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3 tape & reel (tr) | Avl | RFQ |
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| BAS 16S H6327 | discrete semiconductor | diode sw 80v 200ma hs sot363 1.25v @ 150ma 1¦a @ 75v 200ma (dc) 80v 4ns standard small signal =< 200ma (io) any speed 3 independent surface mount 6-tssop sc-88 sot-363 pg-sot363-6 tape & reel (tr) | Avl | RFQ |
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| BSC105N10LSF G | discrete semiconductor | mosfet n-ch 100v 90a tdson-8 mosfet n-channel metal oxide logic level gate 100v 90a 10.5 mohm @ 50a 10v 2.4v @ 110¦a 53nc @ 10v 3900pf @ 50v 156w surface mount 8-powertdfn pg-tdson-8 (5.15x6.15) tape & reel (tr) | Avl | RFQ |
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| SPP08N50C3 | discrete semiconductor | mosfet n-ch 560v 7.6a to-220ab mosfet n-channel metal oxide standard 560v 7.6a 600 mohm @ 4.6a 10v 3.9v @ 350¦a 32nc @ 10v 750pf @ 25v 83w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| BCR 183T E6327 | transistors (bjt)singl | transistor pnp dgtl af sc-75 pnp - pre-biased 100ma 50v 10k 10k 30 @ 5ma 5v 300mv @ 500¦a 10ma - 200mhz 250mw surface mount sc-75 sot-416 pg-sc-75 tape & reel (tr) | Avl | RFQ |
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| IPI90R1K0C3 | fets single | mosfet n-ch 900v 5.7a to-262 mosfet n-channel metal oxide standard 900v 5.7a 1 ohm @ 3.3a 10v 3.5v @ 370¦a 34nc @ 10v 850pf @ 100v 89w through hole to-262-3 long leads i¦pak to-262aa pg-to262-3 tube | Avl | RFQ |
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| IPI70N04S4-06 | discrete semiconductor | mosfet n-ch 40v 70a to262-3-1 mosfet n-channel metal oxide standard 40v 70a 6.5 mohm @ 70a 10v 4v @ 26¦a 32nc @ 10v 2550pf @ 25v 58w through hole to-262-3 long leads i¦pak to-262aa pg-to262-3 tube | Avl | RFQ |
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| BC 858A E6327 | discrete semiconductor | transistor pnp af 30v sot-23 pnp 100ma 30v - 650mv @ 5ma 100ma - - 125 @ 2ma 5v 330mw 250mhz surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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| LH1537AAB | solid state relays | solid state relay, transistor output solid state relay, 3750 v isolation-max | Avl | RFQ |
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| IPF09N03LA G | discrete semiconductor | mosfet n-ch 25v 50a dpak mosfet n-channel metal oxide logic level gate 25v 50a 8.6 mohm @ 30a 10v 2v @ 20¦a 13nc @ 5v 1642pf @ 15v 63w surface mount to-252-3 dpak (2 leads + tab) sc-63 p-to252-3 tape & reel (tr) | Avl | RFQ |
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| 611665 | NA | ki rh | Avl | RFQ |
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| BB 535 E7908 | discrete semiconductor | diode varactor 30v sod-323 2.3pf @ 28v 1mhz 9.8 c1/c28 30v single - surface mount sc-76 sod-323 pg-sod323-2 cut tape (ct) | Avl | RFQ |
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| BCP 56-10 E6433 | transistors (bjt) sing | transistor npn af 80v sot-223 npn 1a 80v - 500mv @ 50ma 500ma - - 63 @ 150ma 2v 2w 100mhz surface mount to-261-4 to-261aa pg-sot223-4 tape & reel (tr) | Avl | RFQ |
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| BSC016N03MS G | discrete semiconductor | mosfet n-ch 30v 100a tdson-8 mosfet n-channel metal oxide logic level gate 30v 100a 1.6 mohm @ 30a 10v 2v @ 250¦a 173nc @ 10v 13000pf @ 15v 125w surface mount 8-powertdfn pg-tdson-8 (5.15x6.15) digi-reel« | Avl | RFQ |
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| LH1502BACTR | solid state relays | solid state relay, dual transistor output solid state relay, 3750 v isolation-max, gullwing, smd, 8 ... | Avl | RFQ |
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| BGF 109C E6328 | filters | ic filter/esd prot 10ch wlp-24 low pass rc (pi) 10 - 45db @ 800mhz ~ 2ghz 70 - r = 70 ohms c = 17pf yes 5th data lines for mobile devices 24-ufbga 0.081"" l x 0.077"" w (2.07mm x 1.95mm) 0.026"" (0.65mm) tape & reel (tr) | Avl | RFQ |
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| BSB028N06NN3 G | fets single | mosfet n-ch 60v 22a wdson-2 mosfet n-channel metal oxide logic level gate 60v 90a 2.8 mohm @ 30a 10v 4v @ 102¦a 143nc @ 10v 12000pf @ 30v 78w surface mount 3-wdson mg-wdson-2 canpak mö digi-reel« | Avl | RFQ |
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| BBY 53-02V E6327 | discrete semiconductor | diode tuning 6v 20ma sc-79 3.1pf @ 3v 1mhz 2.6 c1/c3 6v single - surface mount sc-79 sod-523 pg-sc79-2 tape & reel (tr) | Avl | RFQ |
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| BTS7700GT | integrated circuits (i | ic sw trilithic 200mohm pdso28 high side - - 90 mohm 2ma 9a 40v - surface mount 28-soic (0.295"" 7.50mm width) p-dso-28 tape & reel (tr) | Avl | RFQ |
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| IPS50R520CP | discrete semiconductor | mosfet n-ch 550v 7.1a to-251 mosfet n-channel metal oxide standard 550v 7.1a 520 mohm @ 3.8a 10v 3.5v @ 250¦a 17nc @ 10v 680pf @ 100v 66w through hole to-251-3 short leads ipak to-251aa pg-to251-3 tube | Avl | RFQ |
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| BF 2030W E6814 | discrete semiconductor | mosfet n-ch 8v 40ma sot-343 n-channel 800mhz 23db 5v 40ma 1.5db 10ma - 8v sc-82a sot-343 pg-sot343-4 tape & reel (tr) | Avl | RFQ |
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| BFY193 (P) | rf transistors (bjt) | trans rf npn 12v 80ma micro-x1 npn 12v 7.5ghz 2.3db ~ 2.9db @ 2ghz 12.5db ~ 13.5db 580mw 50 @ 30ma 8v 80ma surface mount micro-x1 micro-x1 bulk | Avl | RFQ |
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| IPB320N20N3 G | discrete semiconductor | mosfet n-ch 200v 34a to263-3 mosfet n-channel metal oxide logic level gate 200v 34a 32 mohm @ 34a 10v 4v @ 90¦a 29nc @ 10v 2350pf @ 100v 136w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-2 digi-reel« | Avl | RFQ |
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| SMBT 3904PN H6327 | discrete semiconductor | trans array npn/pnp 40v sot363 npn pnp 200ma 40v 400mv @ 5ma 50ma - 100 @ 10ma 1v 250mw 250mhz surface mount 6-tssop sc-88 sot-363 pg-sot363-6 tape & reel (tr) | Avl | RFQ |
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| ICE3A3065I | integrated circuits (i | ic offline ctrlr smps cm to220 - isolated - 92khz ~ 108khz - 8.5 v ~ 22 v 650v - 128w - -25¦c ~ 130¦c to-220-6 formed leads pg-to220-6 tube | Avl | RFQ |
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