ASAP Semiconductor is your sourcing solution for top-quality Infineon Technologies products, presenting highly competitive pricing and rapid lead times on popular part numbers such as IPA60R520E6, BAT 17-07 E6327, SIDC09D60E6, BCP 53-10 H6327, IPB083N10N3 G, and others. Every Infineon Technologies item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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Part No. | Part Type | Description | Availability | RFQ | |
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IPA60R520E6 | discrete semiconductor | mosfet n-ch 600v 8.1a to220 mosfet n-channel metal oxide standard 600v 8.1a 520 mohm @ 2.8a 10v 3.5v @ 230¦a 23.4nc @ 10v 512pf @ 100v 29w through hole to-220-3 full pack pg-to-220-fp tube | Avl | RFQ |
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BAT 17-07 E6327 | discrete semiconductor | diode schottky 4v 130ma sot-143 schottky - 2 independent 4v 130ma 0.75pf @ 0v 1mhz 15 ohm @ 5ma 10khz 150mw to-253-4 to-253aa pg-sot143-4 tape & reel (tr) | Avl | RFQ |
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SIDC09D60E6 | discrete semiconductor | diode fast sw 600v 20a wafer standard 600v 20a (dc) 1.7v @ 20a fast recovery =< 500ns > 200ma (io) 150ns 27¦a @ 600v - surface mount wafer sawn on foil bulk | Avl | RFQ |
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BCP 53-10 H6327 | transistors (bjt) sing | trans pnp af 80v 1a sot223 pnp 1a 80v - 500mv @ 50ma 500ma - - 63 @ 150ma 2v 2w 125mhz surface mount to-261-4 to-261aa pg-sot223-4 tape & reel (tr) | Avl | RFQ |
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IPB083N10N3 G | discrete semiconductor | mosfet n-ch 100v 80a to263-3 mosfet n-channel metal oxide standard 100v 80a 8.3 mohm @ 73a 10v 3.5v @ 75¦a 55nc @ 10v 3980pf @ 50v 125w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-2 digi-reel« | Avl | RFQ |
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BSS159N E6906 | discrete semiconductor | mosfet n-ch 60v 230ma sot-23 mosfet n-channel metal oxide depletion mode 60v 230ma 3.5 ohm @ 160ma 10v 2.4v @ 26¦a 2.9nc @ 5v 44pf @ 25v 360mw surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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BSC0904NSI | fets single | mosfet n-ch 30v 20a 8tdson mosfet n-channel metal oxide logic level gate 30v 78a 3.7 mohm @ 30a 10v 2v @ 250¦a 17nc @ 10v 1100pf @ 15v 37w surface mount 8-powertdfn pg-tdson-8 digi-reel« | Avl | RFQ |
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ICE1HS01G | integrated circuits (i | ic ctrlr resonate mode dso8 - isolated - 50khz ~ 128khz - 10.2 v ~ 20.5 v - - - - -25¦c ~ 125¦c 8-soic (0.154"" 3.90mm width) pg-dso-8 tape & reel (tr) | Avl | RFQ |
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SRF 55V10P NB | undefined category | ic eeprom 10kbit intellig wafer - - | Avl | RFQ |
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SPD30N06S2-23 | discrete semiconductor | mosfet n-ch 55v 30a dpak mosfet n-channel metal oxide standard 55v 30a 23 mohm @ 21a 10v 4v @ 50¦a 32nc @ 10v 1250pf @ 25v 100w surface mount to-252-3 dpak (2 leads + tab) sc-63 p-to252-3 tape & reel (tr) | Avl | RFQ |
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ICE3A1065 | integrated circuits (i | ic offline ctrlr smps cm 8dip - isolated - 92khz ~ 108khz - 8.5 v ~ 22 v 650v - 32w - -25¦c ~ 130¦c 8-dip (0.300"" 7.62mm) pg-dip-8 tube | Avl | RFQ |
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BFR 181 E6327 | rf transistors (bjt) | transistor npn rf 12v sot-23 npn 12v 8ghz 0.9db ~ 1.2db @ 900mhz ~ 1.8ghz 18.5db 175mw 70 @ 5ma 8v 20ma surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 digi-reel« | Avl | RFQ |
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LH1537AAB | solid state relays | solid state relay, transistor output solid state relay, 3750 v isolation-max | Avl | RFQ |
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TLE7182EM | integrated circuits (i | ic driver n-bridge 24ssop h bridge half bridge - inverting and non-inverting 100ns - - - 1 2 - 2 or 4 55v 7 v ~ 34 v -40¦c ~ 150¦c surface mount 24-lssop (0.154"" 3.90mm width) exposed pad pg-ssop-24-4 tape & reel (tr) | Avl | RFQ |
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IPB029N06N3 G E8187 | fets single | mosfet n-ch 60v 120a to263-3 mosfet n-channel metal oxide standard 60v 120a 3.2 mohm @ 100a 10v 4v @ 118¦a 165nc @ 10v 13000pf @ 30v 188w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3 tape & reel (tr) | Avl | RFQ |
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BCR 142 B6327 | transistors (bjt)singl | transistor npn dgtl af sot-23 npn - pre-biased 100ma 50v 22k 47k 70 @ 5ma 5v 300mv @ 500¦a 10ma - 150mhz 200mw surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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PTFB211501E V1 | discrete semiconductor | fet rf ldmos 150w h36248-2 ldmos 2.17ghz 18db 30v - - 1.2a 140w 65v 2-flatpack fin leads h-36248-2 tray | Avl | RFQ |
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SPP100N03S2L-03 | discrete semiconductor | mosfet n-ch 30v 100a to-220ab mosfet n-channel metal oxide logic level gate 30v 100a 3 mohm @ 80a 10v 2v @ 250¦a 220nc @ 10v 8180pf @ 25v 300w through hole to-220-3 p-to220ab tube | Avl | RFQ |
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BAT 15-099 E6433 | discrete semiconductor | diode schottky 4v 110ma sot-143 schottky - 2 independent 4v 110ma 0.35pf @ 0v 1mhz - 100mw to-253-4 to-253aa pg-sot143-4 tape & reel (tr) | Avl | RFQ |
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IHY15N120R3 | discrete semiconductor | igbt 1200v 30a 254w to247hc-3 trench 1200v 1.7v @ 15v 15a 30a 254w standard through hole to-247-3 variant pg-to247hc-3 tube | Avl | RFQ |
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BTS247Z | fets single | mosfet n-ch 55v 33a to220-5 mosfet n-channel metal oxide logic level gate 55v 33a 18 mohm @ 12a 10v 2v @ 90¦a 90nc @ 10v 1730pf @ 25v 120w through hole to-220-5 formed leads pg-to220-5-3 tube | Avl | RFQ |
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BSO615CT | discrete semiconductor | mosfet n/p-ch 60v 3.1a/2a 8soic n and p-channel logic level gate 60v 3.1a 2a 110 mohm @ 3.1a 10v 2v @ 20¦a 22.5nc @ 10v 380pf @ 25v 2w surface mount 8-soic (0.154"" 3.90mm width) pg-dso-8 digi-reel« | Avl | RFQ |
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SIDC08D60C6Y | discrete semiconductor | diode fast sw sawed wafer standard 600v 30a (dc) 1.95v @ 30a standard recovery >500ns > 200ma (io) - 27¦a @ 600v - surface mount wafer sawn on foil bulk | Avl | RFQ |
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BSP315P-E6327 | discrete semiconductor | mosfet p-ch 60v 1.17a sot-223 mosfet p-channel metal oxide logic level gate 60v 1.17a 800 mohm @ 1.17a 10v 2v @ 160¦a 7.8nc @ 10v 160pf @ 25v 1.8w surface mount to-261-4 to-261aa pg-sot223-4 cut tape (ct) | Avl | RFQ |
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BTS50070-1TMB | pmic mosfet bridge dri | ic switch pwr hiside to220-7 high side non-inverting 1 7 mohm 12a 90a 5.5 v ~ 30 v -40¦c ~ 150¦c through hole to-220-7 pg-to220-7 tube | Avl | RFQ |
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