ASAP Semiconductor is your sourcing solution for top-quality Infineon Technologies products, presenting highly competitive pricing and rapid lead times on popular part numbers such as BUZ73L, IGW03N120H2, PTFA210601E V4, IPP70N10S3L-12, IPP80N06S2L-11, and others. Every Infineon Technologies item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| BUZ73L | discrete semiconductor | mosfet n-ch 200v 7a to-220ab mosfet n-channel metal oxide logic level gate 200v 7a 400 mohm @ 3.5a 5v 2v @ 1ma - 840pf @ 25v 40w through hole to-220-3 pg-to-220-3 tube | Avl | RFQ |
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| IGW03N120H2 | discrete semiconductor | igbt 1200v 9.6a 62.5w to247-3 - 1200v 2.8v @ 15v 3a 9.6a 62.5w standard through hole to-247-3 pg-to247-3 tape & reel (tr) | Avl | RFQ |
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| PTFA210601E V4 | discrete semiconductor | ic fet rf ldmos 60w h-36265-2 ldmos 2.14ghz 16db 28v 10¦a - 550ma 12w 65v 2-flatpack fin leads h-36265-2 tray | Avl | RFQ |
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| IPP70N10S3L-12 | fets single | mosfet n-ch 100v 70a to220-3 mosfet n-channel metal oxide logic level gate 100v 70a 12.1 mohm @ 70a 10v 2.4v @ 83¦a 80nc @ 10v 5550pf @ 25v 125w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| IPP80N06S2L-11 | discrete semiconductor | mosfet n-ch 55v 80a to220-3 mosfet n-channel metal oxide logic level gate 55v 80a 11 mohm @ 60a 10v 2v @ 93¦a 80nc @ 10v 2075pf @ 25v 158w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| BSP372 E6327 | discrete semiconductor | mosfet n-ch 100v 1.7a sot-223 mosfet n-channel metal oxide logic level gate 100v 1.7a 310 mohm @ 1.7a 5v 2v @ 1ma - 520pf @ 25v 1.8w surface mount to-261-4 to-261aa pg-sot223-4 tape & reel (tr) | Avl | RFQ |
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| BFP 420 H6433 | discrete semiconductor | trans rf npn 25ghz 4.5v sot343 npn 5v 25ghz 1.1db @ 1.8ghz 21db 160mw 60 @ 20ma 4v 35ma surface mount sc-82a sot-343 sot-343 tape & reel (tr) | Avl | RFQ |
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| IPB080N03L G | discrete semiconductor | mosfet n-ch 30v 50a to263-3 mosfet n-channel metal oxide logic level gate 30v 50a 8 mohm @ 30a 10v 2.2v @ 250¦a 18nc @ 10v 1900pf @ 15v 47w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-2 digi-reel« | Avl | RFQ |
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| BCR 198 E6433 | discrete semiconductor | transistor pnp dgtl af sot-23 pnp - pre-biased 100ma 50v 47k 47k 70 @ 5ma 5v 300mv @ 500¦a 10ma - 190mhz 200mw surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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| SPB100N03S2-03 G | discrete semiconductor | mosfet n-ch 30v 100a d2pak mosfet n-channel metal oxide standard 30v 100a 3 mohm @ 80a 10v 4v @ 250¦a 150nc @ 10v 7020pf @ 25v 300w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab p-to263-3 tape & reel (tr) | Avl | RFQ |
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| BFP 520F H6327 | discrete semiconductor | trans rf npn 2.5v 40ma tsfp-4 npn 3.5v 45ghz 0.95db @ 1.8ghz 22.5db 100mw 70 @ 20ma 2v 40ma surface mount 4-smd flat leads 4-tsfp tape & reel (tr) | Avl | RFQ |
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| BF 2040R E6814 | discrete semiconductor | mosfet n-ch 8v 40ma sot-143r n-channel 800mhz 23db 5v 40ma 1.6db 15ma - 8v sot-143r pg-sot143r-4 tape & reel (tr) | Avl | RFQ |
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| SPP100N06S2L-05 | discrete semiconductor | mosfet n-ch 55v 100a to-220 mosfet n-channel metal oxide logic level gate 55v 100a 4.7 mohm @ 80a 10v 2v @ 250¦a 230nc @ 10v 7530pf @ 25v 300w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| BSC0908NS | fets single | mosfet n-ch 34v 49a 8tdson mosfet n-channel metal oxide logic level gate 34v 49a 8 mohm @ 30a 10v 2.2v @ 250¦a 14nc @ 10v 1220pf @ 15v 30w surface mount 8-powertdfn pg-tdson-8 (5.15x6.15) digi-reel« | Avl | RFQ |
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| IPB180N06S4-H1 | discrete semiconductor | mosfet n-ch 60v 180a to263-7 mosfet n-channel metal oxide standard 60v 180a 1.7 mohm @ 100a 10v 4v @ 200¦a 270nc @ 10v 21900pf @ 25v 250w surface mount to-263-7 d¦pak (6 leads + tab) to-263cb pg-to263-7 tape & reel (tr) | Avl | RFQ |
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| IPI65R380C6 | discrete semiconductor | mosfet n-ch 650v 10.6a to262 mosfet n-channel metal oxide standard 650v 10.6a 380 mohm @ 3.2a 10v 3.5v @ 320¦a 39nc @ 10v 710pf @ 100v 83w through hole to-262-3 long leads i¦pak to-262aa pg-to262-3 tube | Avl | RFQ |
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| BCR 523U E6327 | resistor | transistors switching - resistor biased npn silicon digital transistor | Avl | RFQ |
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| IPB120N04S4-02 | discrete semiconductor | mosfet n-ch 40v 120a to263-3-2 mosfet n-channel metal oxide standard 40v 120a 1.8 mohm @ 100a 10v 4v @ 110¦a 134nc @ 10v 10740pf @ 25v 158w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3-2 tape & reel (tr) | Avl | RFQ |
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| SIDC05D60C6 | discrete semiconductor | diode fast sw 600v 15a wafer standard 600v 15a (dc) 1.95v @ 15a standard recovery >500ns > 200ma (io) - 27¦a @ 600v - surface mount wafer sawn on foil bulk | Avl | RFQ |
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| SPD15P10P G | discrete semiconductor | mosfet p-ch 100v 15a to252-3 mosfet p-channel metal oxide standard 100v 15a 240 mohm @ 10.6a 10v 2.1v @ 1.54ma 48nc @ 10v 1280pf @ 25v 128w surface mount to-252-3 dpak (2 leads + tab) sc-63 pg-to252-3 tape & reel (tr) | Avl | RFQ |
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| IPP26CN10N G | fets single | mosfet n-ch 100v 35a to-220 mosfet n-channel metal oxide standard 100v 35a 26 mohm @ 35a 10v 4v @ 39¦a 31nc @ 10v 2070pf @ 50v 71w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| SDB20S30 | discrete semiconductor | diode schottky 300v 10a d2pak 1.7v @ 10a 200¦a @ 300v 10a (dc) 300v 0ns silicon carbide schottky no recovery time > 500ma (io) 1 pair common cathode surface mount to-263-3 d¦pak (2 leads + tab) to-263ab d2pak tape & reel (tr) | Avl | RFQ |
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| BC 860BW E6327 | transistors (bjt) sing | transistor pnp af 45v sot-323 pnp 100ma 45v - 650mv @ 5ma 100ma - - 220 @ 2ma 5v 250mw 250mhz surface mount sc-70 sot-323 pg-sot323-3 tape & reel (tr) | Avl | RFQ |
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| SPB47N10L | discrete semiconductor | mosfet n-ch 100v 47a d2pak mosfet n-channel metal oxide logic level gate 100v 47a 26 mohm @ 33a 10v 2v @ 2ma 135nc @ 10v 2500pf @ 25v 175w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab p-to263-3 tape & reel (tr) | Avl | RFQ |
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| TLE6259-2G | NA | NA | Avl | RFQ |
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