ASAP Semiconductor is your sourcing solution for top-quality Infineon Technologies products, presenting highly competitive pricing and rapid lead times on popular part numbers such as SPB80N03S2L-05 G, BC 849C E6327, BC 856BW E6327, IPB80N04S2-04, BSS670S2L, and others. Every Infineon Technologies item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
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| SPB80N03S2L-05 G | discrete semiconductor | mosfet n-ch 30v 80a d2pak mosfet n-channel metal oxide logic level gate 30v 80a 4.9 mohm @ 55a 10v 2v @ 110¦a 89.7nc @ 10v 3320pf @ 25v 167w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab p-to263-3 tape & reel (tr) | Avl | RFQ |
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| BC 849C E6327 | discrete semiconductor | transistor npn af 30v sot-23 npn 100ma 30v - 600mv @ 5ma 100ma - - 420 @ 2ma 5v 330mw 250mhz surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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| BC 856BW E6327 | discrete semiconductor | transistor pnp af 65v sot-323 pnp 100ma 65v - 650mv @ 5ma 100ma - - 220 @ 2ma 5v 250mw 250mhz surface mount sc-70 sot-323 pg-sot323-3 tape & reel (tr) | Avl | RFQ |
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| IPB80N04S2-04 | fets single | mosfet n-ch 40v 80a to263-3 mosfet n-channel metal oxide standard 40v 80a 3.4 mohm @ 80a 10v 4v @ 250¦a 170nc @ 10v 5300pf @ 25v 300w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3 tape & reel (tr) | Avl | RFQ |
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| BSS670S2L | fets single | mosfet n-ch 55v 540ma sot-23 mosfet n-channel metal oxide logic level gate 55v 540ma 650 mohm @ 270ma 10v 2v @ 2.7¦a 2.26nc @ 10v 75pf @ 25v 360mw surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 cut tape (ct) | Avl | RFQ |
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| BCR 133S H6433 | discrete semiconductor | trans npn dgtl 50v 100ma sot363 2 npn - pre-biased (dual) 100ma 50v 10k 10k 30 @ 5ma 5v 300mv @ 500¦a 10ma - 130mhz 250mw surface mount 6-tssop sc-88 sot-363 pg-sot363-6 tape & reel (tr) | Avl | RFQ |
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| BAW 56S B6327 | discrete semiconductor | diode array 80v 200ma sot-363 1.25v @ 150ma 150na @ 70v 200ma (dc) 80v 4ns standard small signal =< 200ma (io) any speed 2 pair common anode surface mount 6-tssop sc-88 sot-363 pg-sot363-6 tape & reel (tr) | Avl | RFQ |
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| BCR 503 B6327 | discrete semiconductor | transistor npn dgtl af sot-23 npn - pre-biased 500ma 50v 2.2k 2.2k 40 @ 50ma 5v 300mv @ 2.5ma 50ma - 100mhz 330mw surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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| BCR 133 B6327 | transistors (bjt)singl | transistor npn dgtl af sot-23 npn - pre-biased 100ma 50v 10k 10k 30 @ 5ma 5v 300mv @ 500¦a 10ma - 130mhz 200mw surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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| BF 1005S E6327 | rf fets | mosfet n-ch 8v 25ma sot-143 n-channel 800mhz 22db 5v 25ma 1.6db - - 8v to-253-4 to-253aa pg-sot143-4 tape & reel (tr) | Avl | RFQ |
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| IPB03N03LA G | fets single | mosfet n-ch 25v 80a to-263 mosfet n-channel metal oxide logic level gate 25v 80a 2.7 mohm @ 55a 10v 2v @ 100¦a 57nc @ 5v 7027pf @ 15v 150w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3 digi-reel« | Avl | RFQ |
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| BAR 64-04W H6327 | rf diodes | diode rf pin 150v 100ma sot323 pin - 1 pair series connection 150v 100ma 0.35pf @ 20v 1mhz 1.35 ohm @ 100ma 100mhz 250mw sc-70 sot-323 sot-323 digi-reel« | Avl | RFQ |
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| IPB11N03LA | discrete semiconductor | mosfet n-ch 25v 30a d2pak mosfet n-channel metal oxide logic level gate 25v 30a 11.2 mohm @ 30a 10v 2v @ 20¦a 11nc @ 5v 1358pf @ 15v 52w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3 tape & reel (tr) | Avl | RFQ |
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| BDP 948 H6433 | discrete semiconductor | trans pnp af 45v 3a sot223 pnp 3a 45v - 500mv @ 200ma 2a - - 85 @ 500ma 1v 5w 100mhz surface mount to-261-4 to-261aa pg-sot223-4 tape & reel (tr) | Avl | RFQ |
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| BSC0908NS | discrete semiconductor | mosfet n-ch 34v 49a 8tdson mosfet n-channel metal oxide logic level gate 34v 49a 8 mohm @ 30a 10v 2.2v @ 250¦a 14nc @ 10v 1220pf @ 15v 30w surface mount 8-powertdfn pg-tdson-8 (5.15x6.15) digi-reel« | Avl | RFQ |
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| SPP47N10L | fets single | mosfet n-ch 100v 47a to-220 mosfet n-channel metal oxide logic level gate 100v 47a 26 mohm @ 33a 10v 2v @ 2ma 135nc @ 10v 2500pf @ 25v 175w through hole to-220-3 p-to220-3 tube | Avl | RFQ |
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| IKP20N60T | discrete semiconductor | igbt 600v 40a 166w to220-3 trench and field stop 600v 2.05v @ 15v 20a 40a 166w standard through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| BSC079N10NS G | discrete semiconductor | mosfet n-ch 100v 100a tdson-8 mosfet n-channel metal oxide standard 100v 100a 7.9 mohm @ 50a 10v 4v @ 110¦a 87nc @ 10v 5900pf @ 50v 156w surface mount 8-powertdfn pg-tdson-8 (5.15x6.15) tape & reel (tr) | Avl | RFQ |
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| SIDC30D60E6 | discrete semiconductor | diode fast sw 600v 75a wafer standard 600v 75a (dc) 1.25v @ 75a standard recovery >500ns > 200ma (io) - 27¦a @ 600v - surface mount wafer sawn on foil bulk | Avl | RFQ |
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| TDA4862 | integrated circuits (i | ic pfc controller dcm 8dip discontinuous conduction (dcm) - - 11 v ~ 19 v -40¦c ~ 125¦c through hole 8-dip (0.300"" 7.62mm) p-dip-8 tube | Avl | RFQ |
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| IKU15N60R | igbts single | igbt 600v 30a 250w to251-3 trench 600v 2.1v @ 15v 15a 30a 250w standard through hole to-251-3 short leads ipak to-251aa pg-to251-3 tube | Avl | RFQ |
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| IPP110N20NA | discrete semiconductor | mosfet n-ch 200v 88a to220-3 mosfet n-channel metal oxide logic level gate 200v 88a 10.7 mohm @ 88a 10v 4v @ 270¦a 87nc @ 10v 7100pf @ 100v 300w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| SPD08P06P | fets single | mosfet p-ch 60v 8.83a dpak mosfet p-channel metal oxide standard 60v 8.83a 300 mohm @ 6.2a 10v 4v @ 250¦a 13nc @ 10v 420pf @ 25v 42w surface mount to-252-3 dpak (2 leads + tab) sc-63 pg-to252-3 tape & reel (tr) | Avl | RFQ |
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| BAT 18-05 E6327 | discrete semiconductor | diode switching 35v 100ma sot-23 1.2v @ 100ma 20na @ 20v 100ma (dc) 35v 120ns standard small signal =< 200ma (io) any speed 1 pair common cathode surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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| SIDC09D60E6 UNSAWN | diodes rectifiers sing | diode fast switching sawed wafer standard 600v 20a (dc) 1.7v @ 20a fast recovery =< 500ns > 200ma (io) 150ns 27¦a @ 600v - surface mount wafer sawn on foil bulk | Avl | RFQ |
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