ASAP Semiconductor is your sourcing solution for top-quality Infineon Technologies products, presenting highly competitive pricing and rapid lead times on popular part numbers such as IPA60R750E6, BSC0908NS, ICE3B0565JG, BSC080P03LS G, BSC106N025S G, and others. Every Infineon Technologies item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| IPA60R750E6 | discrete semiconductor | mosfet n-ch 600v 5.7a to220 mosfet n-channel metal oxide standard 600v 5.7a 750 mohm @ 2a 10v 3.5v @ 170¦a 17.2nc @ 10v 373pf @ 100v 27w through hole to-220-3 full pack pg-to-220-fp tube | Avl | RFQ |
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| BSC0908NS | fets single | mosfet n-ch 34v 49a 8tdson mosfet n-channel metal oxide logic level gate 34v 49a 8 mohm @ 30a 10v 2.2v @ 250¦a 14nc @ 10v 1220pf @ 15v 30w surface mount 8-powertdfn pg-tdson-8 (5.15x6.15) digi-reel« | Avl | RFQ |
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| ICE3B0565JG | integrated circuits (i | ic offline ctrlr smps otp dso12 - isolated - 58khz ~ 76khz - 10.3 v ~ 27 v 650v - 25w - -25¦c ~ 130¦c 16-soic (0.154"" 3.90mm width) 12 leads pg-dso-16/12 tape & reel (tr) | Avl | RFQ |
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| BSC080P03LS G | discrete semiconductor | mosfet p-ch 30v 30a tdson-8 mosfet p-channel metal oxide logic level gate 30v 30a 8 mohm @ 30a 10v 1v @ 250¦a 122.4nc @ 10v 6140pf @ 15v 89w surface mount 8-powertdfn pg-tdson-8 (5.15x6.15) digi-reel« | Avl | RFQ |
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| BSC106N025S G | discrete semiconductor | mosfet n-ch 25v 30a tdson-8 mosfet n-channel metal oxide logic level gate 25v 30a 10.6 mohm @ 30a 10v 2v @ 20¦a 11nc @ 5v 1370pf @ 15v 43w surface mount 8-powertdfn pg-tdson-8 (5.15x6.15) tape & reel (tr) | Avl | RFQ |
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| BSC109N10NS3 G | discrete semiconductor | mosfet n-ch 100v 63a 8tdson mosfet n-channel metal oxide standard 100v 63a 10.9 mohm @ 46a 10v 3.5v @ 45¦a 35nc @ 10v 2500pf @ 50v 78w surface mount 8-powertdfn pg-tdson-8 digi-reel« | Avl | RFQ |
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| BAS 70-06 E6327 | diodes rectifiers arra | diode schottky 70v ca sot-23 1v @ 15ma 100na @ 50v 70ma (dc) 70v 100ps schottky small signal =< 200ma (io) any speed 1 pair common anode surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 digi-reel« | Avl | RFQ |
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| ESD8V0L2B-03L E6327 | circuit protection | tvs lo cap 2chan bidir tslp-3 8v 14.5v - 2 channel array - bidirectional surface mount sc-101 sot-883 pg-tslp-3 digi-reel« | Avl | RFQ |
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| BCR 183U E6327 | resistor | transistors switching - resistor biased pnp silicon digital transistor | Avl | RFQ |
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| BC 846PN H6327 | transistors (bjt) arra | trans npn/pnp 65v 100ma sot363 npn pnp 100ma 65v 650mv @ 5ma 100ma - 200 @ 2ma 5v 250mw 250mhz surface mount 6-tssop sc-88 sot-363 pg-sot363-6 tape & reel (tr) | Avl | RFQ |
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| BC 847PN H6433 | discrete semiconductor | trans npn/pnp 45v 100ma sot363 npn pnp 100ma 45v 650mv @ 5ma 100ma - 200 @ 2ma 5v 250mw 250mhz surface mount 6-tssop sc-88 sot-363 pg-sot363-6 tape & reel (tr) | Avl | RFQ |
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| BB 669 E7904 | variable capacitance d | diode var cap 30v 20ma sod-323 2.9pf @ 28v 1mhz 23.2 c1/c28 30v single - surface mount sc-76 sod-323 pg-sod323-2 tape & reel (tr) | Avl | RFQ |
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| PTFA080551F V4 | discrete semiconductor | ic fet rf ldmos 55w h-37265-2 ldmos 960mhz 18.5db 28v 10¦a - 600ma 55w 65v 2-flatpack fin leads flanged h-37265-2 tray | Avl | RFQ |
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| IPB080N03L G | discrete semiconductor | mosfet n-ch 30v 50a to263-3 mosfet n-channel metal oxide logic level gate 30v 50a 8 mohm @ 30a 10v 2.2v @ 250¦a 18nc @ 10v 1900pf @ 15v 47w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-2 digi-reel« | Avl | RFQ |
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| BCR 108T E6327 | discrete semiconductor | transistor npn dgtl sc-75 npn - pre-biased 100ma 50v 2.2k 47k 70 @ 5ma 5v 300mv @ 500¦a 10ma - 170mhz 250mw surface mount sc-75 sot-416 pg-sc-75 tape & reel (tr) | Avl | RFQ |
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| BFP 420 H6801 | rf transistors (bjt) | trans rf npn 25ghz 4.5v sot343 npn 5v 25ghz 1.1db @ 1.8ghz 21db 160mw 60 @ 20ma 4v 35ma surface mount sc-82a sot-343 sot-343 tape & reel (tr) | Avl | RFQ |
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| IPI12CNE8N G | fets single | mosfet n-ch 85v 67a to262-3 mosfet n-channel metal oxide standard 85v 67a 12.6 mohm @ 67a 10v 4v @ 83¦a 64nc @ 10v 4340pf @ 40v 125w through hole to-262-3 long leads i¦pak to-262aa pg-to262-3 tube | Avl | RFQ |
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| BFG 193 E6433 | discrete semiconductor | transistor rf npn 12v sot-223 npn 12v 8ghz 1db ~ 1.6db @ 900mhz ~ 1.8ghz 10.5db ~ 16db 600mw 70 @ 30ma 8v 80ma surface mount to-261-4 to-261aa pg-sot223-4 tape & reel (tr) | Avl | RFQ |
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| BBY 57-05W H6327 | variable capacitance d | diode tuning 10v 20ma sot323 5.5pf @ 4v 1mhz 4.5 c1/c4 10v 1 pair common cathode - surface mount sc-70 sot-323 pg-sot323-3 tape & reel (tr) | Avl | RFQ |
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| BSP320S E6327 | discrete semiconductor | mosfet n-ch 60v 2.9a sot-223 mosfet n-channel metal oxide logic level gate 60v 2.9a 120 mohm @ 2.9a 10v 4v @ 20¦a 12nc @ 10v 340pf @ 25v 1.8w surface mount to-261-4 to-261aa pg-sot223-4 tape & reel (tr) | Avl | RFQ |
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| BSO130P03S H | discrete semiconductor | mosfet p-ch 30v 9.2a dso-8 mosfet p-channel metal oxide logic level gate 30v 9.2a 13 mohm @ 11.7a 10v 2.2v @ 140¦a 81nc @ 10v 3520pf @ 25v 1.56w surface mount 8-soic (0.154"" 3.90mm width) p-dso-8 digi-reel« | Avl | RFQ |
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| BCR 183W H6327 | discrete semiconductor | trans pnp dgtl 50v 100ma sot323 pnp - pre-biased 100ma 50v 10k 10k 30 @ 5ma 5v 300mv @ 500¦a 10ma - 200mhz 250mw surface mount sc-70 sot-323 pg-sot323-3 tape & reel (tr) | Avl | RFQ |
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| IHW40N60RF | igbts single | igbt 600v 80a 305w to247-3 trench 600v 2.4v @ 15v 40a 80a 305w standard through hole to-247-3 pg-to247-3 tube | Avl | RFQ |
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| ESD5V3U4U-HDMI E6327 | tvs diodes | diode esd array 5.3v tslp-9 5.3v 6v - 4 channel array - unidirectional surface mount 9-smd no lead pg-tslp-9 digi-reel« | Avl | RFQ |
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| IPP147N03L G | discrete semiconductor | mosfet n-ch 30v 20a to-220-3 mosfet n-channel metal oxide logic level gate 30v 20a 14.7 mohm @ 20a 10v 2.2v @ 250¦a 10nc @ 10v 1000pf @ 15v 31w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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