ASAP Semiconductor is your sourcing solution for top-quality Infineon Technologies products, presenting highly competitive pricing and rapid lead times on popular part numbers such as IKB15N60T, BAS 16W H6327, TLE4942-1, IPB100N08S2L-07, BSP171PE6327, and others. Every Infineon Technologies item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| IKB15N60T | discrete semiconductor | igbt 600v 30a 130w to263-3 trench and field stop 600v 2.05v @ 15v 15a 30a 130w standard surface mount 6-tssop sc-88 sot-363 pg-sot363-6 tape & reel (tr) | Avl | RFQ |
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| BAS 16W H6327 | discrete semiconductor | diode 80v 250ma sot323 standard 80v 250ma (dc) 1.25v @ 150ma fast recovery =< 500ns > 200ma (io) 4ns 1¦a @ 75v 2pf @ 0v 1mhz surface mount sc-70 sot-323 pg-sot323-3 tape & reel (tr) | Avl | RFQ |
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| TLE4942-1 | resistors | ic hall effect sensor sso-2 | Avl | RFQ |
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| IPB100N08S2L-07 | discrete semiconductor | mosfet n-ch 75v 100a to263-3 mosfet n-channel metal oxide logic level gate 75v 100a 6.5 mohm @ 80a 10v 2v @ 250¦a 246nc @ 10v 5400pf @ 25v 300w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3 tape & reel (tr) | Avl | RFQ |
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| BSP171PE6327 | discrete semiconductor | mosfet p-ch 60v 1.9a sot223 mosfet p-channel metal oxide logic level gate 60v 1.9a 300 mohm @ 1.9a 10v 2v @ 460¦a 20nc @ 10v 460pf @ 25v 1.8w surface mount to-261-4 to-261aa pg-sot223-4 cut tape (ct) | Avl | RFQ |
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| IPP120N06N G | discrete semiconductor | mosfet n-ch 60v 75a to-220 mosfet n-channel metal oxide standard 60v 75a 12 mohm @ 75a 10v 4v @ 94¦a 62nc @ 10v 2100pf @ 30v 158w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| PTF210101M V1 | discrete semiconductor | ic fet rf ldmos 10w tssop-10 ldmos 2.17ghz 15db 28v 1¦a - 180ma 10w 65v 10-tfsop 10-msop (0.118"" 3.00mm width) pg-rfp-10 tape & reel (tr) | Avl | RFQ |
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| IPB50R250CP | discrete semiconductor | mosfet n-ch 550v 13a to-263 mosfet n-channel metal oxide standard 550v 13a 250 mohm @ 7.8a 10v 3.5v @ 520¦a 36nc @ 10v 1420pf @ 100v 114w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3 tape & reel (tr) | Avl | RFQ |
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| SPP07N60CFD | fets single | mosfet n-ch 650v 6.6a to-220 mosfet n-channel metal oxide standard 650v 6.6a 700 mohm @ 4.6a 10v 5v @ 300¦a 47nc @ 10v 790pf @ 25v 83w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| BCR 135S E6327 | discrete semiconductor | transistor npn dgtl af sot-363 2 npn - pre-biased (dual) 100ma 50v 10k 47k 70 @ 5ma 5v 300mv @ 500¦a 10ma - 150mhz 250mw surface mount 6-tssop sc-88 sot-363 pg-sot363-6 tape & reel (tr) | Avl | RFQ |
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| SIDC81D60E6 | diodes rectifiers sing | diode fast sw 600v 200a wafer standard 600v 200a (dc) 1.25v @ 200a standard recovery >500ns > 200ma (io) - 27¦a @ 600v - surface mount wafer sawn on foil bulk | Avl | RFQ |
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| IKP06N60T | discrete semiconductor | igbt 600v 12a 88w to220-3 trench and field stop 600v 2.05v @ 15v 6a 12a 88w standard through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| PTFA192401E V4 | discrete semiconductor | ic fet rf ldmos 240w h-36260-2 ldmos 1.96ghz 16db 30v 10¦a - 1.6a 50w 65v 2-flatpack fin leads h-36260-2 tray | Avl | RFQ |
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| BSL306N L6327 | discrete semiconductor | mosfet n-ch dual 30v 2.3a tsop-6 2 n-channel (dual) logic level gate 30v 2.3a 57 mohm @ 2.3a 10v 2v @ 11¦a 1.6nc @ 5v 275pf @ 15v 500mw surface mount sc-74 sot-457 pg-tsop6-6 digi-reel« | Avl | RFQ |
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| IPP015N04N G | discrete semiconductor | mosfet n-ch 40v 120a to220-3 mosfet n-channel metal oxide standard 40v 120a 1.5 mohm @ 100a 10v 4v @ 200¦a 250nc @ 10v 20000pf @ 20v 250w through hole to-220-3 pg-to220-3 tube | Avl | RFQ |
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| SIDC16D60SIC3 | discrete semiconductor | diode schottky 600v 5a wafer silicon carbide schottky 600v 5a (dc) 1.7v @ 5a no recovery time > 500ma (io) 0ns 200¦a @ 600v 170pf @ 1v 1mhz surface mount wafer sawn on foil bulk | Avl | RFQ |
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| IPB60R299CP | discrete semiconductor | mosfet n-ch 650v 11a to-263 mosfet n-channel metal oxide standard 600v 11a 299 mohm @ 6.6a 10v 3.5v @ 440¦a 29nc @ 10v 1100pf @ 100v 96w surface mount to-263-3 d¦pak (2 leads + tab) to-263ab pg-to263-3 digi-reel« | Avl | RFQ |
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| IPI12CNE8N G | discrete semiconductor | mosfet n-ch 85v 67a to262-3 mosfet n-channel metal oxide standard 85v 67a 12.6 mohm @ 67a 10v 4v @ 83¦a 64nc @ 10v 4340pf @ 40v 125w through hole to-262-3 long leads i¦pak to-262aa pg-to262-3 tube | Avl | RFQ |
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| ICLS6021J | pmic led drivers | ic led dvr offl cm 8dip - - - ac dc offline switcher flyback pwm 1 - yes - general purpose - 67khz - 10.3 v ~ 26 v - through hole 8-dip (0.300"" 7.62mm) pg-dip-8-6 tube -25¦c ~ 130¦c | Avl | RFQ |
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| IPI100P03P3L-04 | discrete semiconductor | mosfet p-ch 30v 100a to262-3 mosfet p-channel metal oxide logic level gate 30v 100a 4.3 mohm @ 80a 10v 2.1v @ 475¦a 200nc @ 10v 9300pf @ 25v 200w through hole to-262-3 long leads i¦pak to-262aa pg-to262-3 tube | Avl | RFQ |
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| BCX 52-16 E6327 | discrete semiconductor | transistor pnp af 60v sot-89 pnp 1a 60v - 500mv @ 50ma 500ma - - 100 @ 150ma 2v 2w 125mhz surface mount to-243aa pg-sot89-4 tape & reel (tr) | Avl | RFQ |
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| IKA06N60T | discrete semiconductor | igbt 600v 10a 28w to220-3 trench and field stop 600v 2.05v @ 15v 6a 10a 28w standard through hole to-220-3 full pack pg-to220-3 tube | Avl | RFQ |
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| 2N7002DW H6327 | discrete semiconductor | mosfet 2n-ch 60v 0.3a sot363 2 n-channel (dual) logic level gate 60v 300ma 3 ohm @ 500ma 10v 2.5v @ 250¦a 0.6nc @ 10v 20pf @ 25v 500mw surface mount 6-tssop sc-88 sot-363 pg-sot363-6 digi-reel« | Avl | RFQ |
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| BFN 27 E6327 | transistors (bjt) sing | transistor rf pnp 300v sot-23 pnp 200ma 300v - 500mv @ 2ma 20ma - - 30 @ 30ma 10v 360mw 100mhz surface mount to-236-3 sc-59 sot-23-3 pg-sot23-3 tape & reel (tr) | Avl | RFQ |
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| ICE3B0565J | integrated circuits (i | ic offline ctrlr smps otp 8dip - isolated - 58khz ~ 76khz - 10.3 v ~ 27 v 650v - 25w - -25¦c ~ 130¦c 8-dip (0.300"" 7.62mm) pg-dip-8 tube | Avl | RFQ |
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