ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as APT30DF60HJ, APT47F60J, MSD100-12, APT20M20JLL, APTDF430U100G, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| APT30DF60HJ | semiconductor modules | power module full bridge sot-227 600v 60a single phase fast recovery =< 500ns > 200ma (io) 25ns chassis mount sot-227-4 minibloc bulk sot-227 | Avl | RFQ |
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| APT47F60J | semiconductor modules | mosfet n-ch 600v 49a sot-227 mosfet n-channel metal oxide standard 600v 49a 90 mohm @ 33a 10v 5v @ 2.5ma 330nc @ 10v 13190pf @ 25v 540w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| MSD100-12 | bridge rectifiers | diode bridge 3ph 1200v 100a sm3 1200v 100a three phase standard recovery >500ns > 200ma (io) - chassis mount m3 bulk sm3 | Avl | RFQ |
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| APT20M20JLL | fets | mosfet n-ch 200v 104a sot-227 mosfet n-channel metal oxide standard 200v 104a 20 mohm @ 52a 10v 5v @ 2.5ma 110nc @ 10v 6850pf @ 25v 463w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTDF430U100G | diodes rectifiers | diode module sgl 1000v 430a lp4 2.3v @ 500a 2.5ma @ 1000v 500a 1000v (1kv) 120ns standard fast recovery =< 500ns > 200ma (io) single chassis mount lp4 lp4 bulk | Avl | RFQ |
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| APT30D40BCTG | discrete semiconductor | diode ult fast 2x30a 400v to-247 1.5v @ 30a 250¦a @ 400v 30a 400v 32ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT10050JVR | semiconductor modules | mosfet n-ch 1000v 19a sot-227 mosfet n-channel metal oxide standard 1000v (1kv) 19a 500 mohm @ 500ma 10v 4v @ 2.5ma 500nc @ 10v 7900pf @ 25v 450w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT60M80L2VRG | discrete semiconductor | mosfet n-ch 600v 65a to-264max mosfet n-channel metal oxide standard 600v 65a 80 mohm @ 32.5a 10v 4v @ 5ma 590nc @ 10v 13300pf @ 25v 833w through hole to-264-3 to-264aa 264 maxö [l2] tube | Avl | RFQ |
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| APT5518BFLLG | fets single | mosfet n-ch 550v 31a to-247 mosfet n-channel metal oxide standard 550v 31a 180 mohm @ 15.5a 10v 5v @ 1ma 67nc @ 10v 3286pf @ 25v 403w through hole to-247-3 to-247-3 tube | Avl | RFQ |
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| APT6015LVRG | discrete semiconductor | mosfet n-ch 600v 38a to-264 mosfet n-channel metal oxide logic level gate 600v 38a 150 mohm @ 500ma 10v 4v @ 2.5ma 475nc @ 10v 9000pf @ 25v 520w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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| APT2X30DQ60J | diodes rectifiers | diode dual 30a 600v sot-227 2.2v @ 30a 25¦a @ 600v 30a 600v 105ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTGT150A120G | igbts | igbt module trench phase leg sp6 trench and field stop half bridge 1200v 2.1v @ 15v 150a 220a 350¦a 10.7nf @ 25v 690w standard no chassis mount sp6 sp6 | Avl | RFQ |
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| APT12067B2FLLG | discrete semiconductor | mosfet n-ch 1200v 18a t-max mosfet n-channel metal oxide standard 1200v (1.2kv) 18a 670 mohm @ 9a 10v 5v @ 2.5ma 150nc @ 10v 4420pf @ 25v 565w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APTGT35A120T1G | semiconductor modules | igbt mod trench phase leg sp1 trench and field stop half bridge 1200v 2.1v @ 15v 35a 55a 250¦a 2.5nf @ 25v 208w standard yes chassis mount sp1 sp1 | Avl | RFQ |
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| APTM50A15FT1G | semiconductor modules | mosfet module phase leg sp1 2 n-channel (half bridge) standard 500v 25a 180 mohm @ 21a 10v 5v @ 1ma 170nc @ 10v 5448pf @ 25v 208w chassis mount sp1 sp1 bulk | Avl | RFQ |
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| FST16090 | diodes rectifiers | power mod schottky dio 80a 90v 960mv @ 80a 2ma @ 90v 80a 90v - schottky fast recovery =< 500ns > 200ma (io) 1 pair common cathode * * * * | Avl | RFQ |
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| APT44F80B2 | discrete semiconductor | mosfet n-ch 800v 47a t-max mosfet n-channel metal oxide standard 800v 47a 210 mohm @ 24a 10v 5v @ 2.5ma 305nc @ 10v 9330pf @ 25v 1135w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT20M18B2VFRG | discrete semiconductor | mosfet n-ch 200v 100a t-max mosfet n-channel metal oxide standard 200v 100a 18 mohm @ 50a 10v 4v @ 2.5ma 330nc @ 10v 9880pf @ 25v 625w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT55M50JFLL | semiconductor modules | mosfet n-ch 550v 77a sot-227 mosfet n-channel metal oxide standard 550v 77a 50 mohm @ 38.5a 10v 5v @ 5ma 265nc @ 10v 12400pf @ 25v 694w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT24M120L | discrete semiconductor | mosfet n-ch 1200v 24a to-264 mosfet n-channel metal oxide standard 1200v (1.2kv) 24a 680 mohm @ 12a 10v 5v @ 2.5ma 260nc @ 10v 8370pf @ 25v 1040w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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| APTC60AM45T1G | fets | mosfet pwr mod phase leg sp1 2 n-channel (half bridge) standard 600v 49a 45 mohm @ 24.5a 10v 3.9v @ 3ma 150nc @ 10v 7200pf @ 25v 250w chassis mount sp1 sp1 bulk | Avl | RFQ |
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| APT10086BVRG | discrete semiconductor | mosfet n-ch 1000v 13a to-247 mosfet n-channel metal oxide standard 1000v (1kv) 13a 860 mohm @ 500ma 10v 4v @ 1ma 275nc @ 10v 4440pf @ 25v 370w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT8030JVR | fets | mosfet n-ch 800v 25a sot-227 mosfet n-channel metal oxide logic level gate 800v 25a 300 mohm @ 500ma 10v 4v @ 2.5ma 510nc @ 10v 7900pf @ 25v 450w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT8014JFLL | fets | mosfet n-ch 800v 42a sot-227 mosfet n-channel metal oxide standard 800v 42a 160 mohm @ 21a 10v 5v @ 5ma 285nc @ 10v 7238pf @ 25v 595w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| HS24040 | semiconductor modules | diode schottky 40v 240a halfpak 550mv @ 240a 12ma @ 40v 240a 40v - schottky fast recovery =< 500ns > 200ma (io) single chassis mount half-pak half-pak bulk | Avl | RFQ |
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