ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as APTGT450SK60G, APTC60TDUM35PG, APT6015JVFR, APT50M60JVFR, APTGF50H60T3G, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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Part No. | Part Type | Description | Availability | RFQ | |
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APTGT450SK60G | igbts | igbt 600v 550a 1750w sp6 trench and field stop single 600v 1.8v @ 15v 450a 550a 500¦a 37nf @ 25v 1750w standard no chassis mount sp6 sp6 | Avl | RFQ |
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APTC60TDUM35PG | fets | mosfet mod triple dual src sp6-p 6 n-channel (3-phase leg) standard 600v 72a 35 mohm @ 72a 10v 3.9v @ 5.4ma 518nc @ 10v 14000pf @ 25v 416w chassis mount sp6 sp6-p bulk | Avl | RFQ |
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APT6015JVFR | fets | mosfet n-ch 600v 35a sot-227 mosfet n-channel metal oxide logic level gate 600v 35a 150 mohm @ 17.5a 10v 4v @ 2.5ma 475nc @ 10v 9000pf @ 25v 450w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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APT50M60JVFR | fets | mosfet n-ch 500v 63a sot-227 mosfet n-channel metal oxide standard 500v 63a 60 mohm @ 31.5a 10v 4v @ 5ma 560nc @ 10v 10600pf @ 25v 568w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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APTGF50H60T3G | igbts | power module igbt 600v 50a sp3 npt full bridge inverter 600v 2.45v @ 15v 50a 65a 250¦a 2.2nf @ 25v 250w standard yes chassis mount sp3 sp3 | Avl | RFQ |
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APT45M100J | fets | mosfet n-ch 1000v 45a sot-227 mosfet n-channel metal oxide logic level gate 1000v (1kv) 45a 180 mohm @ 33a 10v 5v @ 2.5ma 570nc @ 10v 18500pf @ 25v 960w chassis mount sot-227-4 minibloc sot-227 tube | Avl | RFQ |
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APT30D60BCAG | discrete semiconductor | diode ult fast 2x27a 600v to-247 1.8v @ 30a 250¦a @ 600v 27a 600v 85ns standard fast recovery =< 500ns > 200ma (io) 1 pair common anode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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APTGT50TDU60PG | igbts | igbt mod triple dual source sp6p trench and field stop triple dual - common source 600v 1.9v @ 15v 50a 80a 250¦a 3.15nf @ 25v 176w standard no chassis mount sp6 sp6-p | Avl | RFQ |
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APT1201R5BVFRG | discrete semiconductor | mosfet n-ch 1200v 10a to-247 mosfet n-channel metal oxide standard 1200v (1.2kv) 10a 1.5 ohm @ 5a 10v 4v @ 1ma 285nc @ 10v 4440pf @ 25v 370w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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MSKD60-12 | diodes rectifiers | diode mod gpp 1200v 60a sd1 1.3v @ 200a 5ma @ 1200v 60a 1200v (1.2kv) - standard standard recovery >500ns > 200ma (io) 1 pair common cathode chassis mount d1 d1 bulk | Avl | RFQ |
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APT38F80L | fets single | mosfet n-ch 800v 41a to-264 mosfet n-channel metal oxide standard 800v 41a 240 mohm @ 20a 10v 5v @ 2.5ma 260nc @ 10v 8070pf @ 25v 1040w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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MSDM200-16 | semiconductor modules | power mod rect bridge 3ph m3-1 1600v 200a three phase standard recovery >500ns > 200ma (io) - * * * * | Avl | RFQ |
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APT12067B2FLLG | discrete semiconductor | mosfet n-ch 1200v 18a t-max mosfet n-channel metal oxide standard 1200v (1.2kv) 18a 670 mohm @ 9a 10v 5v @ 2.5ma 150nc @ 10v 4420pf @ 25v 565w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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APT50GT120B2RG | discrete semiconductor | igbt 1200v 94a 625w to247 npt 1200v 3.7v @ 15v 50a 94a 625w standard through hole to-247-3 t-maxö [b2] tube | Avl | RFQ |
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APTM10DDAM19T3G | semiconductor modules | mosfet mod dual boost chop sp3 2 n-channel (dual) standard 100v 70a 21 mohm @ 35a 10v 4v @ 1ma 200nc @ 10v 5100pf @ 25v 208w chassis mount sp3 sp3 bulk | Avl | RFQ |
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APTGF100SK120TG | semiconductor modules | igbt 1200v 135a 568w sp4 npt single 1200v 3.7v @ 15v 100a 135a 350¦a 6.9nf @ 25v 568w standard yes chassis mount sp4 sp4 | Avl | RFQ |
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MSD200-12 | bridge rectifiers | diode bridge 3ph 1200v 200a sm3 1200v 200a three phase standard recovery >500ns > 200ma (io) - chassis mount m3 bulk sm3 | Avl | RFQ |
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APTGT50H60T1G | semiconductor modules | igbt mod trench full bridge sp1 trench and field stop full bridge inverter 600v 1.9v @ 15v 50a 80a 250¦a 3.15nf @ 25v 176w standard yes chassis mount sp1 sp1 | Avl | RFQ |
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APT75GP120B2G | igbts single | igbt 1200v 100a 1042w tmax pt 1200v 3.9v @ 15v 75a 100a 1042w standard through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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APTC60AM45BC1G | semiconductor modules | mosfet n ch 600v 49a sp1 - standard 600v 49a 45 mohm @ 24.5a 10v 3.9v @ 3ma 150nc @ 10v 7200pf @ 25v 250w * * * * | Avl | RFQ |
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APTGT300DA170D3G | semiconductor modules | igbt 1700v 530a 1470w d3 trench and field stop single 1700v 2.4v @ 15v 300a 530a 8ma 26nf @ 25v 1470w standard no chassis mount d3 d3 | Avl | RFQ |
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VRF154FL | discrete semiconductor | mosfet rf pwr n-ch 50v 600w t2 n-channel 30mhz 17db 50v 60a - 800ma 600w 170v t2 t2 tube | Avl | RFQ |
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APTGT400U170D4G | igbts | igbt 1700v 800a 2080w d4 trench and field stop single 1700v 2.4v @ 15v 400a 800a 1ma 33nf @ 25v 2080w standard no chassis mount d4 d4 | Avl | RFQ |
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APT43F60B2 | discrete semiconductor | mosfet n-ch 600v 45a t-max mosfet n-channel metal oxide standard 600v 45a 150 mohm @ 21a 10v 5v @ 2.5ma 215nc @ 10v 8590pf @ 25v 780w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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APT30GP60BDQ1G | discrete semiconductor | igbt 600v 100a 463w to247 pt 600v 2.7v @ 15v 30a 100a 463w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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