ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as APTC60AM24T1G, APTGT150SK170D1G, APTGF530U120D4G, APT100F50J, APT2X100D120J, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| APTC60AM24T1G | fets | mosfet pwr mod phase leg sp1 2 n-channel (half bridge) standard 600v 95a 24 mohm @ 47.5a 10v 3.9v @ 5ma 300nc @ 10v 14400pf @ 25v 462w chassis mount sp1 sp1 bulk | Avl | RFQ |
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| APTGT150SK170D1G | semiconductor modules | igbt 1700v 280a 780w d1 trench and field stop single 1700v 2.4v @ 15v 150a 280a 4ma 13nf @ 25v 780w standard no chassis mount d1 d1 | Avl | RFQ |
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| APTGF530U120D4G | igbts | igbt 1200v 700a 3900w d4 npt single 1200v 3.7v @ 15v 600a 700a 5ma 37nf @ 25v 3900w standard no chassis mount d4 d4 | Avl | RFQ |
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| APT100F50J | fets | mosfet n-ch 500v 103a sot227 mosfet n-channel metal oxide standard 500v 103a 36 mohm @ 75a 10v 5v @ 5ma 620nc @ 10v 24600pf @ 25v 960w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT2X100D120J | semiconductor modules | diode dual 93a 1200v sot-227 2.5v @ 100a 250¦a @ 1200v 93a 1200v (1.2kv) 420ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount isotop isotop« tube | Avl | RFQ |
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| APT50GT120JU3 | semiconductor modules | igbt 1200v 75a 347w sot227 trench and field stop single 1200v 2.1v @ 15v 50a 75a 5ma 3.6nf @ 25v 347w standard no chassis mount isotop sot-227 | Avl | RFQ |
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| APT6021BLLG | discrete semiconductor | mosfet n-ch 600v 29a to-247 mosfet n-channel metal oxide standard 600v 29a 210 mohm @ 14.5a 10v 5v @ 1ma 80nc @ 10v 3470pf @ 25v 400w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT60N60BCSG | discrete semiconductor | mosfet n-ch 600v 60a to-247 mosfet n-channel metal oxide standard 600v 60a 45 mohm @ 44a 10v 3.9v @ 3ma 190nc @ 10v 7200pf @ 25v 431w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT80GA90B | discrete semiconductor | igbt 900v 145a 625w to247 pt 900v 3.1v @ 15v 47a 145a 625w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT15GT60BRG | igbts single | igbt 600v 42a 184w to247 npt 600v 2.5v @ 15v 15a 42a 184w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT58F50J | semiconductor modules | mosfet n-ch 500v 58a sot-227 mosfet n-channel metal oxide standard 500v 58a 65 mohm @ 42a 10v 5v @ 2.5ma 340nc @ 10v 13500pf @ 25v 540w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT2X31D100J | semiconductor modules | diode dual 28a 1000v sot-227 2.3v @ 30a 250¦a @ 1000v 28a 1000v (1kv) 290ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT50GN60BDQ2G | discrete semiconductor | igbt 600v 107a 366w to247 trench and field stop 600v 1.85v @ 15v 50a 107a 366w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT15GN120BDQ1G | discrete semiconductor | igbt 1200v 45a 195w to247 trench and field stop 1200v 2.1v @ 15v 15a 45a 195w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT8030B2VFRG | fets single | mosfet n-ch 800v 27a t-max mosfet n-channel metal oxide logic level gate 800v 27a 300 mohm @ 500ma 10v 4v @ 2.5ma 510nc @ 10v 7900pf @ 25v 520w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| MSD30-08 | semiconductor modules | diode bridge 3ph 800v 30a sm1 800v 30a three phase standard recovery >500ns > 200ma (io) - qc terminal m1 bulk msd | Avl | RFQ |
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| APT1001RBVRG | fets single | mosfet n-ch 1000v 11a to-247 mosfet n-channel metal oxide standard 1000v (1kv) 11a 1 ohm @ 500ma 10v 4v @ 1ma 225nc @ 10v 3660pf @ 25v 280w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT50M85B2VFRG | discrete semiconductor | mosfet n-ch 500v 56a t-max mosfet n-channel metal oxide standard 500v 56a 85 mohm @ 28a 10v 4v @ 2.5ma 420nc @ 10v 10500pf @ 25v 625w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT15D60BCAG | diodes rectifiers arra | diode ult fast 2x14a 600v to-247 1.8v @ 15a 150¦a @ 600v 14a 600v 80ns standard fast recovery =< 500ns > 200ma (io) 1 pair common anode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT2X101DL40J | semiconductor modules | diode dual par 100a 400v sot-227 1.125v @ 100a 500¦a @ 400v 100a 400v 120ns standard small signal =< 200ma (io) any speed 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTM20DUM04G | fets | mosfet mod dual com src 200v sp6 2 n-channel (dual) standard 200v 372a 5 mohm @ 186a 10v 5v @ 10ma 560nc @ 10v 28900pf @ 25v 1250w chassis mount sp6 sp6 bulk | Avl | RFQ |
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| APT15D40BCTG | discrete semiconductor | diode ult fast 2x15a 400v to-247 1.5v @ 15a 150¦a @ 400v 15a 400v 35ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APTGT200DH60G | igbts | igbt mod trench asym bridge sp6 trench and field stop asymmetrical bridge 600v 1.9v @ 15v 200a 290a 250¦a 12.3nf @ 25v 625w standard no chassis mount sp6 sp6 | Avl | RFQ |
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| APT15DQ100BG | discrete semiconductor | diode ult fast 15a 1000v to-247 standard 1000v (1kv) 15a 3v @ 15a fast recovery =< 500ns > 200ma (io) 235ns 100¦a @ 1000v - through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT39M60J | semiconductor modules | mosfet n-ch 600v 42a sot-227 mosfet n-channel metal oxide standard 600v 42a 110 mohm @ 28a 10v 5v @ 2.5ma 280nc @ 10v 11300pf @ 25v 480w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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