ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as APTGT300A60D3G, APTGT150DA120D1G, APT30D120BCTG, APT30M70SVRG, APT10045LLLG, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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Part No. | Part Type | Description | Availability | RFQ | |
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APTGT300A60D3G | semiconductor modules | igbt module trench phase leg d3 trench and field stop half bridge 600v 1.9v @ 15v 300a 400a 500¦a 18.5nf @ 25v 940w standard no chassis mount d3 d3 | Avl | RFQ |
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APTGT150DA120D1G | semiconductor modules | igbt 1200v 220a 700w d1 trench and field stop single 1200v 2.1v @ 15v 150a 220a 4ma 10.8nf @ 25v 700w standard no chassis mount d1 d1 | Avl | RFQ |
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APT30D120BCTG | diodes rectifiers arra | diode ult fast 2x30a 1200v to247 2.5v @ 30a 250¦a @ 1200v 30a 1200v (1.2kv) 370ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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APT30M70SVRG | fets single | mosfet n-ch 300v 48a d3pak mosfet n-channel metal oxide standard 300v 48a 70 mohm @ 500ma 10v 4v @ 1ma 225nc @ 10v 5870pf @ 25v 370w surface mount to-268-3 d¦pak (2 leads + tab) to-268aa d3 [s] tube | Avl | RFQ |
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APT10045LLLG | discrete semiconductor | mosfet n-ch 1000v 23a to-264 mosfet n-channel metal oxide standard 1000v (1kv) 23a 450 mohm @ 11.5a 10v 5v @ 2.5ma 154nc @ 10v 4350pf @ 25v 565w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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APTGT35X120T3G | semiconductor modules | igbt mod trench 3ph bridge sp3 trench and field stop three phase inverter 1200v 2.1v @ 15v 35a 55a 250¦a 2.5nf @ 25v 208w standard yes chassis mount sp3 sp3 | Avl | RFQ |
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APT30DQ120BCTG | discrete semiconductor | diode ult fast 2x30a 1200v to247 3.3v @ 30a 100¦a @ 1200v 30a 1200v (1.2kv) 320ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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APT2X31D100J | diodes rectifiers | diode dual 28a 1000v sot-227 2.3v @ 30a 250¦a @ 1000v 28a 1000v (1kv) 290ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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APT28M120B2 | discrete semiconductor | mosfet n-ch 1200v 29a t-max mosfet n-channel metal oxide standard 1200v (1.2kv) 29a 560 mohm @ 14a 10v 5v @ 2.5ma 300nc @ 10v 9670pf @ 25v 1135w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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APT26F120L | discrete semiconductor | mosfet n-ch 1200v 27a to-264 mosfet n-channel metal oxide standard 1200v (1.2kv) 27a 650 mohm @ 14a 10v 5v @ 2.5ma 300nc @ 10v 9670pf @ 25v 1135w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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APTGT50A60T1G | semiconductor modules | igbt mod trench phase leg sp1 trench and field stop half bridge 600v 1.9v @ 15v 50a 80a 250¦a 3.15nf @ 25v 176w standard yes chassis mount sp1 sp1 | Avl | RFQ |
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APTGF75DA60D1G | semiconductor modules | igbt 600v 100a 355w d1 npt single 600v 2.45v @ 15v 75a 100a 500¦a 3.3nf @ 25v 355w standard no chassis mount d1 d1 | Avl | RFQ |
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APTDF200H20G | semiconductor modules | diode module full bridge sp6 200v 285a single phase fast recovery =< 500ns > 200ma (io) 60ns chassis mount sp6 bulk sp6 | Avl | RFQ |
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APTM100H45STG | semiconductor modules | mosfet full bridge ser/par sp4 4 n-channel (h-bridge) standard 1000v (1kv) 18a 540 mohm @ 9a 10v 5v @ 2.5ma 154nc @ 10v 4350pf @ 25v 357w chassis mount sp4 sp4 bulk | Avl | RFQ |
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APT10021JFLL | semiconductor modules | mosfet n-ch 1000v 37a sot-227 mosfet n-channel metal oxide standard 1000v (1kv) 37a 210 mohm @ 18.5a 10v 5v @ 5ma 395nc @ 10v 9750pf @ 25v 694w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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APT41M80L | discrete semiconductor | mosfet n-ch 800v 43a to-264 mosfet n-channel metal oxide standard 800v 43a 210 mohm @ 20a 10v 5v @ 2.5ma 260nc @ 10v 8070pf @ 25v 1040w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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APT60D30BG | discrete semiconductor | diode ult fast 60a 300v to-247 standard 300v 60a 1.4v @ 60a fast recovery =< 500ns > 200ma (io) 38ns 250¦a @ 300v - through hole radial to-247-2 to-247 tube | Avl | RFQ |
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APTGF90SK60T1G | semiconductor modules | igbt 600v 110a 416w sp1 npt single 600v 2.5v @ 15v 90a 110a 250¦a 4.3nf @ 25v 416w standard yes chassis mount sp1 sp1 | Avl | RFQ |
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APT100GT60JR | semiconductor modules | igbt 600v 148a 500w sot227 npt single 600v 2.5v @ 15v 100a 148a 25¦a 5.15nf @ 25v 500w standard no chassis mount isotop isotop« | Avl | RFQ |
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MSD30-12 | semiconductor modules | diode bridge 3ph 1200v 30a sm1 1200v 30a three phase standard recovery >500ns > 200ma (io) - qc terminal m1 bulk msd | Avl | RFQ |
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MSD100-16 | bridge rectifiers | diode bridge 1600v 100a sm3 1600v 100a three phase standard recovery >500ns > 200ma (io) - chassis mount m3 bulk sm3 | Avl | RFQ |
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APT43GA90B | discrete semiconductor | igbt 900v 78a 337w to-247 pt 900v 3.1v @ 15v 25a 78a 337w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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APT6021BLLG | discrete semiconductor | mosfet n-ch 600v 29a to-247 mosfet n-channel metal oxide standard 600v 29a 210 mohm @ 14.5a 10v 5v @ 1ma 80nc @ 10v 3470pf @ 25v 400w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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APL502LG | discrete semiconductor | mosfet n-ch 500v 58a to-264 mosfet n-channel metal oxide standard 500v 58a 90 mohm @ 29a 12v 4v @ 2.5ma - 9000pf @ 25v 730w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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APT75GN60B2DQ3G | igbts single | igbt 600v 155a 536w to264 - 600v 1.85v @ 15v 75a 155a 536w standard through hole to-264-3 to-264aa - tube | Avl | RFQ |
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