ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as APTDF100H601G, APTM100H18FG, APT2X61DC60J, APTM50AM38SCTG, APTM20AM04FG, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| APTDF100H601G | semiconductor modules | diode module full bridge sp1 600v 135a single phase fast recovery =< 500ns > 200ma (io) 160ns pcb sp1 bulk sp1 | Avl | RFQ |
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| APTM100H18FG | fets | mosfet mod full bridge 1000v sp6 4 n-channel (h-bridge) standard 1000v (1kv) 43a 210 mohm @ 21.5a 10v 5v @ 5ma 372nc @ 10v 10400pf @ 25v 780w chassis mount sp6 sp6 bulk | Avl | RFQ |
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| APT2X61DC60J | semiconductor modules | diode schottky 60a 600v sot-227 1.8v @ 60a 1.2ma @ 600v 60a 600v 0ns silicon carbide schottky no recovery time > 500ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« bulk | Avl | RFQ |
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| APTM50AM38SCTG | fets | mosfet mod phase leg ser/sic sp4 2 n-channel (half bridge) standard 500v 90a 45 mohm @ 45a 10v 5v @ 5ma 246nc @ 10v 11200pf @ 25v 694w chassis mount sp4 sp4 bulk | Avl | RFQ |
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| APTM20AM04FG | semiconductor modules | pwr module mosfet 200v 372a sp6 2 n-channel (half bridge) standard 200v 372a 5 mohm @ 186a 10v 5v @ 10ma 560nc @ 10v 28900pf @ 25v 1250w chassis mount sp6 sp6 bulk | Avl | RFQ |
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| APT30S20BG | diodes rectifiers sing | diode schottky 45a 200v to-247 schottky 200v 45a 850mv @ 30a fast recovery =< 500ns > 200ma (io) 55ns 500¦a @ 200v - through hole radial to-247-2 to-247 [b] tube | Avl | RFQ |
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| APT5010LFLLG | fets single | mosfet n-ch 500v 46a to-264 mosfet n-channel metal oxide standard 500v 46a 100 mohm @ 23a 10v 5v @ 2.5ma 95nc @ 10v 4360pf @ 25v 520w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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| APTGT50A170TG | semiconductor modules | igbt mod trench phase leg sp4 trench and field stop half bridge 1700v 2.4v @ 15v 50a 75a 250¦a 4.4nf @ 25v 312w standard yes chassis mount sp4 sp4 | Avl | RFQ |
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| APT66M60B2 | discrete semiconductor | mosfet n-ch 600v 66a t-max mosfet n-channel metal oxide standard 600v 70a 100 mohm @ 33a 10v 5v @ 2.5ma 330nc @ 10v 13190pf @ 25v 1135w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT29F80J | semiconductor modules | mosfet n-ch 800v 31a sot-227 mosfet n-channel metal oxide standard 800v 31a 210 mohm @ 24a 10v 5v @ 2.5ma 303nc @ 10v 9326pf @ 25v 543w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT10M07JVFR | fets | mosfet n-ch 100v 225a sot-227 mosfet n-channel metal oxide standard 100v 225a 7 mohm @ 500ma 10v 4v @ 5ma 1050nc @ 10v 21600pf @ 25v 700w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTM100SK33T1G | semiconductor modules | mosfet n-ch 1000v 23a sp1 mosfet n-channel metal oxide standard 1000v (1kv) 23a 396 mohm @ 18a 10v 5v @ 2.5ma 305nc @ 10v 7868pf @ 25v 390w chassis mount sp1 sp1 bulk | Avl | RFQ |
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| APT2X61S20J | semiconductor modules | diode schtky dl 75a 200v sot-227 900mv @ 60a 1ma @ 200v 75a 200v 55ns schottky fast recovery =< 500ns > 200ma (io) 2 independent chassis mount isotop isotop« tube | Avl | RFQ |
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| APTDC40H1201G | semiconductor modules | power module diode 1200v 40a sp1 1200v 40a single phase silicon carbide schottky no recovery time > 500ma (io) 0ns pcb sp1 bulk sp1 | Avl | RFQ |
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| APT2X61D100J | diodes rectifiers | diode dual par 55a 1000v sot-227 2.5v @ 60a 250¦a @ 1000v 55a 1000v (1kv) 280ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT30GF60JU2 | semiconductor modules | igbt 600v 58a 192w sot227 npt single 600v 2.5v @ 15v 30a 58a 40¦a 1.85nf @ 25v 192w standard no chassis mount isotop sot-227 | Avl | RFQ |
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| APT37M100L | discrete semiconductor | mosfet n-ch 1000v 37a to-264 mosfet n-channel metal oxide standard 1000v (1kv) 37a 330 mohm @ 18a 10v 5v @ 2.5ma 305nc @ 10v 9835pf @ 25v 1135w through hole to-264-3 to-264aa to-264 tube | Avl | RFQ |
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| APT40GP60B2DQ2G | discrete semiconductor | igbt 600v 100a 543w tmax pt 600v 2.7v @ 15v 40a 100a 543w standard through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| MSCD60-08 | diodes rectifiers | diode mod gpp 800v 60a sd1 1.3v @ 200a 5ma @ 800v 60a 800v - standard standard recovery >500ns > 200ma (io) 1 pair series connection chassis mount d1 d1 bulk | Avl | RFQ |
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| APTM10SKM05TG | semiconductor modules | mosfet n-ch 100v 278a sp4 mosfet n-channel metal oxide standard 100v 278a 5 mohm @ 125a 10v 4v @ 5ma 700nc @ 10v 20000pf @ 25v 780w chassis mount sp4 sp4 bulk | Avl | RFQ |
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| APT30D100BCTG | diodes rectifiers arra | diode ult fast 2x30a 1000v to247 2.3v @ 30a 250¦a @ 1000v 30a 1000v (1kv) 290ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT30S20BCTG | discrete semiconductor | diode schottky 2x45a 200v to-247 850mv @ 30a 500¦a @ 200v 45a 200v 55ns schottky fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT44GA60BD30 | discrete semiconductor | igbt 600v 78a 337w to-247 pt 600v 2.5v @ 15v 26a 78a 337w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT5010JVR | semiconductor modules | mosfet n-ch 500v 44a sot-227 mosfet n-channel metal oxide standard 500v 44a 100 mohm @ 500ma 10v 4v @ 2.5ma 470nc @ 10v 8900pf @ 25v 450w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT5010JFLL | semiconductor modules | mosfet n-ch 500v 41a sot-227 mosfet n-channel metal oxide standard 500v 41a 100 mohm @ 20.5a 10v 5v @ 2.5ma 95nc @ 10v 4360pf @ 25v 378w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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