ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as APT50GT120JRDQ2, APT30D30BCTG, APT12057B2FLLG, APT10M11LVFRG, APT25GN120BG, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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Part No. | Part Type | Description | Availability | RFQ | |
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APT50GT120JRDQ2 | semiconductor modules | igbt 1200v 72a 379w sot227 npt single 1200v 3.7v @ 15v 50a 72a 400¦a 2.5nf @ 25v 379w standard no chassis mount isotop isotop« | Avl | RFQ |
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APT30D30BCTG | diodes rectifiers arra | diode ult fast 300v 30a to-247 1.4v @ 30a 250¦a @ 300v 30a 300v 25ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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APT12057B2FLLG | fets single | mosfet n-ch 1200v 22a t-max mosfet n-channel metal oxide standard 1200v (1.2kv) 22a 570 mohm @ 11a 10v 5v @ 2.5ma 185nc @ 10v 5155pf @ 25v 690w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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APT10M11LVFRG | fets single | mosfet n-ch 100v 100a to-264 mosfet n-channel metal oxide standard 100v 100a 11 mohm @ 500ma 10v 4v @ 2.5ma 450nc @ 10v 10300pf @ 25v 520w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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APT25GN120BG | igbts single | igbt 1200v 67a 272w to247 trench and field stop 1200v 2.1v @ 15v 25a 67a 272w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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APT35GN120L2DQ2G | discrete semiconductor | igbt 1200v 94a 379w to264 npt trench and field stop 1200v 2.1v @ 15v 35a 94a 379w standard through hole to-264-3 to-264aa 264 maxö [l2] tube | Avl | RFQ |
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APT6029BLLG | discrete semiconductor | mosfet n-ch 600v 21a to-247 mosfet n-channel metal oxide standard 600v 21a 290 mohm @ 10.5a 10v 5v @ 1ma 65nc @ 10v 2615pf @ 25v 300w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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APT2X60DQ120J | semiconductor modules | diode dual 60a 1200v sot-227 3.1v @ 60a 100¦a @ 1200v 60a 1200v (1.2kv) 265ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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APT20M22JVRU3 | semiconductor modules | mosfet n-ch 200v 97a sot-227 mosfet n-channel metal oxide standard 200v 97a 22 mohm @ 48.5a 10v 4v @ 2.5ma 290nc @ 10v 8500pf @ 25v 450w chassis mount sot-227-4 minibloc sot-227 bulk | Avl | RFQ |
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APT2X21DC60J | semiconductor modules | diode sic par 600v 20a sot-227 1.8v @ 20a 400¦a @ 600v 20a 600v 0ns silicon carbide schottky no recovery time > 500ma (io) 2 independent chassis mount isotop sot-227 bulk | Avl | RFQ |
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FST16050 | semiconductor modules | diode schottky pwr mod 50v to249 740mv @ 80a 2ma @ 50v 80a 50v - schottky fast recovery =< 500ns > 200ma (io) 1 pair common cathode chassis mount to-249aa isolated base to-249 bulk | Avl | RFQ |
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APTGF100DA120T1G | semiconductor modules | igbt 1200v 130a 735w sp1 npt single 1200v 3.7v @ 15v 100a 130a 250¦a 6.5nf @ 25v 735w standard yes chassis mount sp1 sp1 | Avl | RFQ |
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APTDF100H170G | bridge rectifiers | diode module full bridge sp4 1700v 120a single phase standard recovery >500ns > 200ma (io) 572ns pcb sp4 bulk sp4 | Avl | RFQ |
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APTGT150A120D1G | igbts | igbt module trench phase leg d1 trench and field stop half bridge 1200v 2.1v @ 15v 150a 220a 4ma 10.8nf @ 25v 700w standard no chassis mount d1 d1 | Avl | RFQ |
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APTLGF350A608G | power drivers | power mod intelligent ph leg lp8 igbt half bridge 430a 600v 2500vrms * | Avl | RFQ |
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UFT12520 | diodes rectifiers | diode module ult fast 200v 975mv @ 60a 30¦a @ 200v 60a 200v 40ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode chassis mount module module bulk | Avl | RFQ |
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MRF581G | rf transistors (bjt) | trans npn 18v 200ma macro x npn 18v 5ghz 3db ~ 3.5db @ 500mhz 13db ~ 15.5db 1.25w 50 @ 50ma 5v 200ma surface mount micro-x ceramic (84c) micro-x ceramic (84c) bulk | Avl | RFQ |
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APTM100A13DG | semiconductor modules | mosfet phase leg series dio sp6 2 n-channel (half bridge) standard 1000v (1kv) 65a 156 mohm @ 32.5a 10v 5v @ 6ma 562nc @ 10v 15200pf @ 25v 1250w chassis mount sp6 sp6 bulk | Avl | RFQ |
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APTDF400AK120G | semiconductor modules | diode module phase leg 1200v sp6 3v @ 400a 250¦a @ 1200v 470a 1200v (1.2kv) 385ns standard fast recovery =< 500ns > 200ma (io) 1 pair series connection chassis mount lp4 sp6 bulk | Avl | RFQ |
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APT22F100J | semiconductor modules | mosfet n-ch 1000v 23a sot-227 mosfet n-channel metal oxide standard 1000v (1kv) 23a 380 mohm @ 18a 10v - 305nc @ 10v 9835pf @ 25v 545w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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APT30DQ60BCTG | discrete semiconductor | diode ult fast 2x30a 600v to-247 2.4v @ 30a 25¦a @ 600v 30a 600v 30ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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APT6017LFLLG | discrete semiconductor | mosfet n-ch 600v 35a to-264 mosfet n-channel metal oxide standard 600v 35a 170 mohm @ 17.5a 10v 5v @ 2.5ma 100nc @ 10v 4500pf @ 25v 500w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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APTGT25X120T3G | igbts | igbt module trench 3ph brdg sp3 trench and field stop three phase inverter 1200v 2.1v @ 15v 25a 40a 250¦a 1.8nf @ 25v 156w standard yes chassis mount sp3 sp3 | Avl | RFQ |
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APTGT50DU120TG | semiconductor modules | igbt mod trench dual source sp4 trench and field stop dual common source 1200v 2.1v @ 15v 50a 75a 250¦a 3.6nf @ 25v 277w standard yes chassis mount sp4 sp4 | Avl | RFQ |
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APT50GF60JU3 | semiconductor modules | igbt 600v 75a 277w sot227 npt single 600v 2.7v @ 15v 50a 75a 40¦a 2.25nf @ 25v 277w standard no chassis mount isotop sot-227 | Avl | RFQ |
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