ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as APT30M40JVFR, APTGT100H60T3G, APT15DQ120BG, APT30D60BCAG, APT25GN120B2DQ2G, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| APT30M40JVFR | semiconductor modules | mosfet n-ch 300v 70a sot-227 mosfet n-channel metal oxide standard 300v 70a 40 mohm @ 500ma 10v 4v @ 2.5ma 425nc @ 10v 10200pf @ 25v 450w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTGT100H60T3G | semiconductor modules | igbt full bridge 600v 150a sp3 trench and field stop full bridge inverter 600v 1.9v @ 15v 100a 150a 250¦a 6.1nf @ 25v 340w standard yes chassis mount sp3 sp3 | Avl | RFQ |
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| APT15DQ120BG | discrete semiconductor | diode ult fast 15a 1200v to-247 standard 1200v (1.2kv) 15a 3.3v @ 15a fast recovery =< 500ns > 200ma (io) 240ns 100¦a @ 1200v - through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT30D60BCAG | diodes rectifiers arra | diode ult fast 2x27a 600v to-247 1.8v @ 30a 250¦a @ 600v 27a 600v 85ns standard fast recovery =< 500ns > 200ma (io) 1 pair common anode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT25GN120B2DQ2G | discrete semiconductor | igbt 1200v 67a 272w tmax npt trench and field stop 1200v 2.1v @ 15v 25a 67a 272w standard through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT10M19SVRG | fets single | mosfet n-ch 100v 75a d3pak mosfet n-channel metal oxide standard 100v 75a 19 mohm @ 500ma 10v 4v @ 1ma 300nc @ 10v 6120pf @ 25v 370w surface mount to-268-3 d¦pak (2 leads + tab) to-268aa d3 [s] tube | Avl | RFQ |
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| APT8030JVFR | fets | mosfet n-ch 800v 25a sot-227 mosfet n-channel metal oxide logic level gate 800v 25a 300 mohm @ 500ma 10v 4v @ 2.5ma 510nc @ 10v 7900pf @ 25v 450w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT1201R4SFLLG | discrete semiconductor | mosfet n-ch 1200v 9a d3pak mosfet n-channel metal oxide standard 1200v (1.2kv) 9a 1.4 ohm @ 4.5a 10v 5v @ 1ma 120nc @ 10v 2500pf @ 25v 300w surface mount to-268-3 d¦pak (2 leads + tab) to-268aa d3 [s] tube | Avl | RFQ |
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| MSCD165-12 | semiconductor modules | diode mod gpp 1200v 165a sd2 1.4v @ 300a 9ma @ 1200v 165a 1200v (1.2kv) - standard standard recovery >500ns > 200ma (io) 1 pair series connection chassis mount d2 sd2 bulk | Avl | RFQ |
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| UFT7260SM1C | semiconductor modules | diode array 600v 35a module 1.35v @ 35a 25¦a @ 600v 35a 600v 75ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode chassis mount module module bulk | Avl | RFQ |
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| APTGF300SK120G | igbts | igbt 1200v 400a 1780w sp6 npt single 1200v 3.9v @ 15v 300a 400a 500¦a 21nf @ 25v 1780w standard no chassis mount sp6 sp6 | Avl | RFQ |
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| APT2X60D40J | semiconductor modules | diode dual 60a 400v sot-227 1.5v @ 60a 250¦a @ 400v 60a 400v 37ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT30GP60BG | discrete semiconductor | igbt 600v 100a 463w to247 pt 600v 2.7v @ 15v 30a 100a 463w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APTM50H14FT3G | fets | mosfet mod full bridge 500v sp3 4 n-channel (h-bridge) standard 500v 26a 168 mohm @ 13a 10v 5v @ 1ma 72nc @ 10v 3259pf @ 25v 208w chassis mount sp3 sp3 bulk | Avl | RFQ |
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| APTGF100A120T3WG | semiconductor modules | igbt npt phase 1200v 130a sp3 npt half bridge 1200v 3.7v @ 15v 100a 130a 250¦a 6.5nf @ 25v 657w standard yes chassis mount sp3 sp3 | Avl | RFQ |
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| APT21M100J | fets | mosfet n-ch 1000v 21a sot-227 mosfet n-channel metal oxide standard 1000v (1kv) 21a 380 mohm @ 16a 10v 5v @ 2.5ma 260nc @ 10v 8500pf @ 25v 462w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| VJ247M | bridge rectifiers | diode avalanche bridge 250v 200v 10a single phase avalanche standard recovery >500ns > 200ma (io) - through hole vj bulk vj | Avl | RFQ |
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| APTM50UM19SG | semiconductor modules | mosfet n-ch 500v 163a j3 mosfet n-channel metal oxide standard 500v 163a 19 mohm @ 81.5a 10v 5v @ 10ma 492nc @ 10v 22400pf @ 25v 1136w chassis mount j3 module module bulk | Avl | RFQ |
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| APT20M22LVFRG | fets single | mosfet n-ch 200v 100a to-264 mosfet n-channel metal oxide standard 200v 100a 22 mohm @ 500ma 10v 4v @ 2.5ma 435nc @ 10v 10200pf @ 25v 520w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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| APT2X30D40J | diodes rectifiers | diode dual 30a 400v sot-227 1.5v @ 30a 250¦a @ 400v 30a 400v 32ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTGF50DH60TG | semiconductor modules | igbt module npt asym bridge sp4 npt asymmetrical bridge 600v 2.45v @ 15v 50a 65a 250¦a 2.2nf @ 25v 250w standard yes chassis mount sp4 sp4 | Avl | RFQ |
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| APTM20DUM05TG | semiconductor modules | mosfet mod dual common src sp8 2 n-channel (dual) standard 200v 333a 5 mohm @ 166.5a 10v 4v @ 8ma 1184nc @ 10v 40800pf @ 25v 1250w chassis mount sp4 sp4 bulk | Avl | RFQ |
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| APL602B2G | discrete semiconductor | mosfet n-ch 600v 49a t-max mosfet n-channel metal oxide standard 600v 49a 125 mohm @ 24.5a 12v 4v @ 2.5ma - 9000pf @ 25v 730w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APTGT75DH60TG | igbts | igbt mod trench asym bridge sp4 trench and field stop asymmetrical bridge 600v 1.9v @ 15v 75a 100a 250¦a 4.62nf @ 25v 250w standard yes chassis mount sp4 sp4 | Avl | RFQ |
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| APT100S20LCTG | diodes rectifiers arra | diode schottky 200v to264 950mv @ 100a 2ma @ 200v 120a 200v 70ns schottky fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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