ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as APTGT100DA120D1G, APTGT100DA60TG, APTGF15X120T3G, APTGF350A60G, APL602J, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| APTGT100DA120D1G | semiconductor modules | igbt 1200v 150a 520w d1 trench and field stop single 1200v 2.1v @ 15v 100a 150a 3ma 7nf @ 25v 520w standard no chassis mount d1 d1 | Avl | RFQ |
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| APTGT100DA60TG | igbts | igbt 600v 150a 340w sp4 trench and field stop single 600v 1.9v @ 15v 100a 150a 250¦a 6.1nf @ 25v 340w standard yes chassis mount sp4 sp4 | Avl | RFQ |
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| APTGF15X120T3G | semiconductor modules | igbt module npt 3ph bridge sp3 npt three phase inverter 1200v 3.7v @ 15v 15a 25a 250¦a 1nf @ 25v 140w standard yes chassis mount sp3 sp3 | Avl | RFQ |
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| APTGF350A60G | semiconductor modules | power module igbt 600v 350a sp6 npt half bridge 600v 2.5v @ 15v 360a 430a 200¦a 17.2nf @ 25v 1562w standard no chassis mount sp6 sp6 | Avl | RFQ |
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| APL602J | semiconductor modules | mosfet n-ch 600v 43a sot-227 mosfet n-channel metal oxide standard 600v 43a 125 mohm @ 21.5a 12v 4v @ 2.5ma - 9000pf @ 25v 565w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTM120DA68T1G | semiconductor modules | mosfet n-ch 1200v 15a sp1 mosfet n-channel metal oxide standard 1200v (1.2kv) 15a 816 mohm @ 12a 10v 5v @ 2.5ma 260nc @ 10v 6696pf @ 25v 357w chassis mount sp1 sp1 bulk | Avl | RFQ |
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| APTGF100A1202G | semiconductor modules | power mod igbt npt phase leg sp2 npt half bridge 1200v 3.7v @ 15v 100a 135a 250¦a 6.5nf @ 25v 568w standard no * * * | Avl | RFQ |
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| APT5010LFLLG | discrete semiconductor | mosfet n-ch 500v 46a to-264 mosfet n-channel metal oxide standard 500v 46a 100 mohm @ 23a 10v 5v @ 2.5ma 95nc @ 10v 4360pf @ 25v 520w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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| APTGT300A60G | igbts | igbt module trench phase leg sp6 trench and field stop half bridge 600v 1.8v @ 15v 300a 430a 350¦a 24nf @ 25v 1150w standard no chassis mount sp6 sp6 | Avl | RFQ |
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| APTM10UM02FAG | semiconductor modules | mosfet n-ch 100v 570a sp6 mosfet n-channel metal oxide standard 100v 570a 2.5 mohm @ 200a 10v 4v @ 10ma 1360nc @ 10v 40000pf @ 25v 1660w chassis mount sp6 sp6 bulk | Avl | RFQ |
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| APTGT50TL601G | semiconductor modules | power module igbt 600v 50a sp1 trench and field stop three level inverter 600v 1.9v @ 15v 50a 80a 250¦a 3.15nf @ 25v 176w standard no chassis mount sp1 sp1 | Avl | RFQ |
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| MSDT150-16 | semiconductor modules | power mod bridge thy 3ph m5 1600v 150a three phase standard recovery >500ns > 200ma (io) - * * * * | Avl | RFQ |
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| APTM100A18FTG | fets | mosfet 2 n ch 1000v 43a sp4 2 n-channel (half bridge) standard 1000v (1kv) 43a 210 mohm @ 21.5a 10v 5v @ 5ma 372nc @ 10v 10400pf @ 25v 780w chassis mount sp4 sp4 bulk | Avl | RFQ |
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| APT2X60D120J | semiconductor modules | diode dual 53a 1200v sot-227 2.5v @ 60a 250¦a @ 1200v 53a 1200v (1.2kv) 400ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT5024BLLG | fets single | mosfet n-ch 500v 22a to-247 mosfet n-channel metal oxide standard 500v 22a 240 mohm @ 11a 10v 5v @ 1ma 43nc @ 10v 1900pf @ 25v 265w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT43GA90B | igbts single | igbt 900v 78a 337w to-247 pt 900v 3.1v @ 15v 25a 78a 337w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT30D40BCTG | diodes rectifiers arra | diode ult fast 2x30a 400v to-247 1.5v @ 30a 250¦a @ 400v 30a 400v 32ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT8011JLL | fets | mosfet n-ch 800v 51a sot-227 mosfet n-channel metal oxide standard 800v 51a 110 mohm @ 25.5a 10v 5v @ 5ma 650nc @ 10v 9480pf @ 25v 694w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTCV50H60T3G | semiconductor modules | igbt trench full bridge sp3 npt trench and field stop full bridge 600v 1.9v @ 15v 50a 80a 250¦a 3.15nf @ 25v 176w standard yes chassis mount sp3 sp3 | Avl | RFQ |
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| APTGT300DU60G | semiconductor modules | igbt mod trench dual source sp6 trench and field stop dual common source 600v 1.8v @ 15v 300a 430a 350¦a 24nf @ 25v 1150w standard no chassis mount sp6 sp6 | Avl | RFQ |
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| APT8065BVFRG | discrete semiconductor | mosfet n-ch 800v 13a to-247 mosfet n-channel metal oxide standard 800v 13a 650 mohm @ 500ma 10v 4v @ 1ma 225nc @ 10v 3700pf @ 25v 280w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT2X101DQ120J | semiconductor modules | diode dual par 100a 1200v sot227 3v @ 100a 100¦a @ 1200v 100a 1200v (1.2kv) 385ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APT5010B2LLG | discrete semiconductor | mosfet n-ch 500v 46a t-max mosfet n-channel metal oxide standard 500v 46a 100 mohm @ 23a 10v 5v @ 2.5ma 95nc @ 10v 4360pf @ 25v 520w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT36N90BC3G | discrete semiconductor | mosfet n-ch 900v 36a to-247 mosfet n-channel metal oxide logic level gate 900v 36a 120 mohm @ 18a 10v 3.5v @ 2.9ma 252nc @ 10v 7463pf @ 25v 390w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APTM100DA33T1G | fets | mosfet n-ch 1000v 23a sp1 mosfet n-channel metal oxide standard 1000v (1kv) 23a 396 mohm @ 18a 10v 5v @ 2.5ma 305nc @ 10v 7868pf @ 25v 390w chassis mount sp1 sp1 bulk | Avl | RFQ |
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