ASAP Semiconductor is your sourcing solution for top-quality Microsemi Power Products Group products, presenting highly competitive pricing and rapid lead times on popular part numbers such as CPT600100E3, APTGT50DA170D1G, APL602LG, SPB160100E3, APTGF300DA120D3G, and others. Every Microsemi Power Products Group item that we have listed is ready for purchase at any time, and you may request quotes for your comparisons at your leisure through the submission of an RFQ form as provided throughout our website.
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| Part No. | Part Type | Description | Availability | RFQ | |
|---|---|---|---|---|---|
| CPT600100E3 | diodes rectifiers | diode schottky 100v 300a md3cc 850mv @ 300a 8ma @ 100v 300a 100v - schottky fast recovery =< 500ns > 200ma (io) 1 pair common cathode chassis mount md3cc md3cc tube | Avl | RFQ |
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| APTGT50DA170D1G | igbts | igbt 1700v 70a 310w d1 trench and field stop single 1700v 2.4v @ 15v 50a 70a 6ma 4.4nf @ 25v 310w standard no chassis mount d1 d1 | Avl | RFQ |
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| APL602LG | discrete semiconductor | mosfet n-ch 600v 49a to-264 mosfet n-channel metal oxide standard 600v 49a 125 mohm @ 24.5a 12v 4v @ 2.5ma - 9000pf @ 25v 730w through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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| SPB160100E3 | semiconductor modules | diode schottky 100v 160a sot-227 920mv @ 160a 5ma @ 100v 160a 100v - schottky fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc sot-227 tube | Avl | RFQ |
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| APTGF300DA120D3G | igbts | igbt 1200v 420a 2100w d3 npt single 1200v 3.7v @ 15v 300a 420a 5ma 19nf @ 25v 2100w standard no chassis mount d3 d3 | Avl | RFQ |
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| MSD100-08 | semiconductor modules | diode bridge 800v 100a sm3 800v 100a three phase standard recovery >500ns > 200ma (io) - chassis mount sm3-20h bulk sm3 | Avl | RFQ |
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| APT10M11JVFR | fets | mosfet n-ch 100v 144a sot-227 mosfet n-channel metal oxide standard 100v 144a 11 mohm @ 500ma 10v 4v @ 2.5ma 450nc @ 10v 10380pf @ 25v 450w chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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| APTGT150DH170G | igbts | igbt mod trench asym bridge sp6 trench and field stop asymmetrical bridge 1700v 2.4v @ 15v 150a 250a 350¦a 13.5nf @ 25v 890w standard no chassis mount sp6 sp6 | Avl | RFQ |
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| APT60GT60JRDQ3 | semiconductor modules | igbt 600v 105a 379w sot227 npt single 600v 2.5v @ 15v 60a 105a 330¦a 3.1nf @ 25v 379w standard no chassis mount sot-227-4 minibloc isotop« | Avl | RFQ |
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| APTGT150DA120D1G | semiconductor modules | igbt 1200v 220a 700w d1 trench and field stop single 1200v 2.1v @ 15v 150a 220a 4ma 10.8nf @ 25v 700w standard no chassis mount d1 d1 | Avl | RFQ |
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| APT10045B2LLG | fets single | mosfet n-ch 1000v 23a t-max mosfet n-channel metal oxide standard 1000v (1kv) 23a 450 mohm @ 11.5a 10v 5v @ 2.5ma 154nc @ 10v 4350pf @ 25v 565w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT40DQ60BCTG | discrete semiconductor | diode ult fast 2x40a 600v to-247 2.4v @ 40a 25¦a @ 600v 40a 600v 25ns standard fast recovery =< 500ns > 200ma (io) 1 pair common cathode through hole radial to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT4F120K | discrete semiconductor | mosfet n-ch 1200v 4a to-220 mosfet n-channel metal oxide standard 1200v (1.2kv) 4a 4.6 ohm @ 2a 10v 5v @ 500¦a 43nc @ 10v 1385pf @ 25v 225w through hole to-220-3 to-220 tube | Avl | RFQ |
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| APTDR90X1601G | semiconductor modules | power module diode 1600v 90a sp1 1600v 90a three phase standard recovery >500ns > 200ma (io) - pcb sp1 bulk sp1 | Avl | RFQ |
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| APT4F120K | discrete semiconductor | mosfet n-ch 1200v 4a to-220 mosfet n-channel metal oxide standard 1200v (1.2kv) 4a 4.6 ohm @ 2a 10v 5v @ 500¦a 43nc @ 10v 1385pf @ 25v 225w through hole to-220-3 to-220 tube | Avl | RFQ |
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| APT5010B2VFRG | fets single | mosfet n-ch 500v 47a t-max mosfet n-channel metal oxide standard 500v 47a 100 mohm @ 500ma 10v 4v @ 2.5ma 470nc @ 10v 8900pf @ 25v 520w through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT75GN60LDQ3G | discrete semiconductor | igbt 600v 155a 536w to264 trench and field stop 600v 1.85v @ 15v 75a 155a 536w standard through hole to-264-3 to-264aa to-264 [l] tube | Avl | RFQ |
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| APT65GP60B2G | discrete semiconductor | igbt 600v 100a 833w tmax pt 600v 2.7v @ 15v 65a 100a 833w standard through hole to-247-3 variant t-maxö [b2] tube | Avl | RFQ |
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| APT50GT60BRDQ2G | discrete semiconductor | igbt 600v 110a 446w to247 npt 600v 2.5v @ 15v 50a 110a 446w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APTM50DSKM65T3G | semiconductor modules | mosfet mod dual buck chopper sp3 2 n-channel (dual) standard 500v 51a 78 mohm @ 25.5a 10v 5v @ 2.5ma 140nc @ 10v 7000pf @ 25v 390w chassis mount sp3 sp3 bulk | Avl | RFQ |
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| APT5020BVRG | discrete semiconductor | mosfet n-ch 500v 26a to-247 mosfet n-channel metal oxide standard 500v 26a 200 mohm @ 500ma 10v 4v @ 1ma 225nc @ 10v 4440pf @ 25v 300w through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| APT25GP90BDQ1G | igbts single | igbt 900v 72a 417w to247 pt 900v 3.9v @ 15v 25a 72a 417w standard through hole to-247-3 to-247 [b] tube | Avl | RFQ |
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| VJ247M | discrete semiconductor | diode avalanche bridge 250v 200v 10a single phase avalanche standard recovery >500ns > 200ma (io) - through hole vj bulk vj | Avl | RFQ |
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| APTGL475SK120D3G | semiconductor modules | igbt 1200v 610a 2080w d3 trench and field stop single 1200v 2.2v @ 15v 400a 610a 5ma 24.6nf @ 25v 2080w standard no chassis mount d3 d3 | Avl | RFQ |
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| APT2X31D60J | diodes rectifiers | diode dual par 30a 600v sot-227 1.8v @ 30a 250¦a @ 600v 30a 600v 85ns standard fast recovery =< 500ns > 200ma (io) 2 independent chassis mount sot-227-4 minibloc isotop« tube | Avl | RFQ |
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