ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-231-3769 (5961002313769). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961002313769 |
| Manufacturers | Bae Systems Inc , C O D I Corp , Electronic Industries Inc , Fairchild Semiconductor Corp , International Diode Corp , Microsemi Corporation , N A P Smd Technology Inc , Silicon Transistor Corp , Telcom Semiconductor Inc , Woodward Inc |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-231-3769 (002313769) |
| NCB Code | USA (00) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 1N4613A | telcom semiconductor inc | semiconductor device diode | 15818 | a | f | Avl | RFQ |
|
| 1N4613A | silicon transistor corp | semiconductor device diode | 07256 | a | a | Avl | RFQ |
|
| 1N4613A | n a p smd technology inc | semiconductor device diode | 99942 | NA | NA | Avl | RFQ |
|
| 1N4613A | microsemi corporation | semiconductor device diode | 14552 | a | r | Avl | RFQ |
|
| 1N4613A | international diode corp | semiconductor device diode | 16068 | a | a | Avl | RFQ |
|
| 1N4613A | fairchild semiconductor corp | semiconductor device diode | 13715 | a | f | Avl | RFQ |
|
| 1N4613A | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
|
| 1N4613A | c o d i corp | semiconductor device diode | 16352 | a | f | Avl | RFQ |
|
| 200977-010 | bae systems inc | semiconductor device diode | 81413 | f | a | Avl | RFQ |
|
| 232160 | woodward inc | semiconductor device diode | 31361 | a | a | Avl | RFQ |
|
| RELEASE5042 | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.27 MINIMUM BREAKDOWN VOLTAGE,DC AND 6.93 MAXIMUM BREAKDOWN VOLTAGE,DC |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT,DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 0.250 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5042 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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