ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-324-3083 (5961003243083). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961003243083 |
| Manufacturers | Adelco Elektronik Gmbh , Lacon Electronic Gmbh , Leonardo Mw Ltd , Military Specifications , Raytheon Company , Rockwell Collins Aerospace |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-324-3083 (003243083) |
| NCB Code | USA (00) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 28473-41010 | leonardo mw ltd | semiconductor device diode | k0662 | e | a | Avl | RFQ |
|
| 353-9019-200 | rockwell collins aerospace | semiconductor device diode | 13499 | a | a | Avl | RFQ |
|
| 4178600-742 | raytheon company | semiconductor device diode | 05869 | a | a | Avl | RFQ |
|
| JANTX1N5419 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| JANTX1N5419 | adelco elektronik gmbh | semiconductor device diode | c7191 | e | r | Avl | RFQ |
|
| JANTX1N5419 | lacon electronic gmbh | semiconductor device diode | d6528 | e | a | Avl | RFQ |
|
| JANTX1N5419A | adelco elektronik gmbh | semiconductor device diode | c7191 | e | r | Avl | RFQ |
|
| JANTXIN5419 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| JTX1N5419 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| MIL-PRF-19500/411 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| TX1N5419 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/411 GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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