ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-356-2978 (5961003562978). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961003562978 |
| Manufacturers | Bae Systems Inc , Dynalec Corporation , Dynarad Corp , Eaton Aerospace Ltd , Electronic Industries Inc , Elsag Bailey Inc , General Instrument Corporation , Hewlett-Packard Company , Honeywell International Inc , Huntron Inc , Joint Army-Navy Specifications , Joint Electron Device Engineering , L 3 Communications Corporation , Lockheed Martin Corporation , Military Specifications , Raytheon Company , Sensitron Inc , Spx Corporation , St Semicon Inc , Systron Donner Inertial Inc , Telecom Technologies Inc , Texas Instruments Inc , Veeco Instruments Inc , Westinghouse Electric Corp , Zenith Electronics Corporation |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-356-2978 (003562978) |
| NCB Code | USA (00) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 04-4012 | huntron inc | semiconductor device diode | 57705 | a | a | Avl | RFQ |
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| 16102-011 | dynalec corporation | semiconductor device diode | 12763 | a | a | Avl | RFQ |
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| 1946577A1 | elsag bailey inc | semiconductor device diode | 05168 | a | a | Avl | RFQ |
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| 1N2117 | raytheon company | semiconductor device diode | 96214 | a | a | Avl | RFQ |
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| 1N3191 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| 1N3255 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| 1N3255 | l 3 communications corporation | semiconductor device diode | 11447 | a | a | Avl | RFQ |
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| 1N3613 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| 1N4005 | sensitron inc | semiconductor device diode | 12930 | a | f | Avl | RFQ |
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| 1N4005 | veeco instruments inc | semiconductor device diode | 80103 | a | h | Avl | RFQ |
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| 1N4005 | st semicon inc | semiconductor device diode | 51589 | a | f | Avl | RFQ |
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| 1N4005 | hewlett-packard company | semiconductor device diode | 28480 | a | a | Avl | RFQ |
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| 1N4005 | general instrument corporation | semiconductor device diode | 58361 | a | h | Avl | RFQ |
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| 200490-703 | bae systems inc | semiconductor device diode | 81413 | f | a | Avl | RFQ |
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| 211-38246 | telecom technologies inc | semiconductor device diode | 05208 | a | f | Avl | RFQ |
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| 212-76 | zenith electronics corporation | semiconductor device diode | 67177 | a | a | Avl | RFQ |
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| 300002 | dynarad corp | semiconductor device diode | 57362 | f | a | Avl | RFQ |
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| 414955-8 | raytheon company | semiconductor device diode | 96214 | a | a | Avl | RFQ |
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| 507A996H01 | westinghouse electric corp | semiconductor device diode | 65054 | a | h | Avl | RFQ |
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| 531138-3 | raytheon company | semiconductor device diode | 96214 | a | a | Avl | RFQ |
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| 585F311PC27 | westinghouse electric corp | semiconductor device diode | 65054 | a | h | Avl | RFQ |
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| 653-520-9005 | honeywell international inc | semiconductor device diode | 99193 | a | a | Avl | RFQ |
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| 7012302P002 | bae systems inc | semiconductor device diode | 94117 | a | a | Avl | RFQ |
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| 822747 | lockheed martin corporation | semiconductor device diode | 56232 | f | a | Avl | RFQ |
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| 8879000054-1 | texas instruments inc | semiconductor device diode | 57057 | a | a | Avl | RFQ |
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| A23149-4 | spx corporation | semiconductor device diode | 08441 | a | h | Avl | RFQ |
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| CR0284 | systron donner inertial inc | semiconductor device diode | 06811 | a | a | Avl | RFQ |
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| IN3613 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| IN4005 | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
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| IN4005 | eaton aerospace ltd | semiconductor device diode | 09790 | a | a | Avl | RFQ |
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| JAN 1N 4005 | joint electron device engineering | semiconductor device diode | 07688 | NA | NA | Avl | RFQ |
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| JAN1N3613 | joint army-navy specifications | semiconductor device diode | 81350 | NA | NA | Avl | RFQ | |
| JAN1N4005 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JAN1N4005G | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JANTX1N3613 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-PRF-19500/228 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-S-19500/427 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | UNABLE TO DECODE | UNABLE TO DECODE |
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | MRAP-COUGAR CAT1 A2 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | UNABLE TO DECODE | UNABLE TO DECODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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