ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-403-3298 (5961004033298). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961004033298 |
| Manufacturers | Adelco Elektronik Gmbh , Bae Systems Inc , Edal Industries Inc , Edo Corporation , Electronic Industries Inc , Gec Alsthom Intl Inc , General Electric Company , General Instrument Corporation , Gilbert Engineering Co Inc , Hamilton Sundstrand Corporation , Inspektorat Wsparcia Sil Zbrojnych , Itt Semiconductors , Lacon Electronic Gmbh , Lockheed Martin Corporation , Microsemi Corporation , Military Specifications , Raytheon Company , Rockwell Collins Aerospace , Semicon Components Inc , Semtech Corporation , Sylvania Electric Products Inc |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-403-3298 (004033298) |
| NCB Code | USA (00) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 1N2071A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| 1N2863 | lockheed martin corporation | semiconductor device diode | 49671 | a | h | Avl | RFQ |
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| 1N3084 | edal industries inc | semiconductor device diode | 06288 | f | a | Avl | RFQ |
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| 1N3084 | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
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| 1N3084 | itt semiconductors | semiconductor device diode | 14433 | a | h | Avl | RFQ |
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| 1N3084 | gilbert engineering co inc | semiconductor device diode | 03877 | a | a | Avl | RFQ |
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| 1N3084 | semicon components inc | semiconductor device diode | 11961 | a | h | Avl | RFQ |
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| 1N4385 | sylvania electric products inc | semiconductor device diode | 93332 | a | h | Avl | RFQ |
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| 1N5552 | general instrument corporation | semiconductor device diode | 15281 | a | h | Avl | RFQ |
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| 1N5552 | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
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| 353-9009-481 | rockwell collins aerospace | semiconductor device diode | 13499 | a | a | Avl | RFQ |
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| 353-9009-482 | rockwell collins aerospace | semiconductor device diode | 13499 | a | a | Avl | RFQ |
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| 353-9019-030 | rockwell collins aerospace | semiconductor device diode | 13499 | a | a | Avl | RFQ |
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| 395940-3 | edo corporation | semiconductor device diode | 00752 | a | a | Avl | RFQ |
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| 53809-8 | raytheon company | semiconductor device diode | 96214 | a | a | Avl | RFQ |
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| 5961PL0801493 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | h | a | Avl | RFQ |
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| 5E4810 52 0003 | hamilton sundstrand corporation | semiconductor device diode | 73030 | a | a | Avl | RFQ |
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| 720665-5 | raytheon company | semiconductor device diode | 05869 | a | a | Avl | RFQ |
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| 7904865-07 | lockheed martin corporation | semiconductor device diode | 90536 | a | a | Avl | RFQ |
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| A15MXR40 | bae systems inc | semiconductor device diode | 31637 | f | a | Avl | RFQ |
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| CC5-726-120 | gec alsthom intl inc | semiconductor device diode | 61549 | a | a | Avl | RFQ |
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| JAN1N3191 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JAN1N5552 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JAN1N5626 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JANTX1N3191 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JANTX1N5552 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JANTX1N5552 | microsemi corporation | semiconductor device diode | 14552 | a | r | Avl | RFQ |
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| JANTX1N5552 | lacon electronic gmbh | semiconductor device diode | d6528 | e | a | Avl | RFQ |
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| JANTX1N5552 | adelco elektronik gmbh | semiconductor device diode | c7191 | e | r | Avl | RFQ |
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| JANTX1N5552A | adelco elektronik gmbh | semiconductor device diode | c7191 | e | r | Avl | RFQ |
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| JANTX1N5626 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-PRF-19500/420 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-S-19500 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-S-19500/420 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| RELEASE4182 | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
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| TR505 | general electric company | semiconductor device diode | 03508 | a | f | Avl | RFQ |
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| TX1N5552 | semtech corporation | semiconductor device diode | 14099 | a | a | Avl | RFQ |
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| TX1N5552 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.250 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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