ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-403-5429 (5961004035429). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961004035429 |
| Manufacturers | American Power Devices Inc , Astec Industries Inc , Bae Systems Inc , Digital Development Corp , Eaton Corporation , Electronic Industries Inc , Falco Data Products , Fsg Inc , General Electric Company , Gte Communication Systems Corp , Joint Army-Navy Specifications , Martin Marietta Corp , Military Specifications , Raytheon Company , Rockwell Collins Aerospace , Texas Instruments Inc |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-403-5429 (004035429) |
| NCB Code | USA (00) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 143136002 | eaton corporation | semiconductor device diode | 31795 | a | a | Avl | RFQ |
|
| 174-14809-67 | gte communication systems corp | semiconductor device diode | 04773 | a | f | Avl | RFQ |
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| 1N4606 | general electric company | semiconductor device diode | 03508 | a | f | Avl | RFQ |
|
| 1N4606 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| 1N4606 | martin marietta corp | semiconductor device diode | 13688 | a | r | Avl | RFQ |
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| 1N4606 | texas instruments inc | semiconductor device diode | 01295 | a | a | Avl | RFQ |
|
| 1N4606 | bae systems inc | semiconductor device diode | 31637 | f | a | Avl | RFQ |
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| 1N4606 | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
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| 1N460W | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
|
| 212-10700210 | falco data products | semiconductor device diode | 66566 | a | f | Avl | RFQ |
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| 212-10700210 | astec industries inc | semiconductor device diode | 61790 | a | a | Avl | RFQ |
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| 353-3656-010 | rockwell collins aerospace | semiconductor device diode | 95105 | a | a | Avl | RFQ |
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| 405606-1 | raytheon company | semiconductor device diode | 54x10 | a | a | Avl | RFQ |
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| 54732-31 | digital development corp | semiconductor device diode | 12692 | a | f | Avl | RFQ |
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| DJXR1556 | general electric company | semiconductor device diode | 03508 | a | f | Avl | RFQ |
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| F52005386 | fsg inc | semiconductor device diode | 65519 | a | f | Avl | RFQ |
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| IN4607 | american power devices inc | semiconductor device diode | 50273 | a | a | Avl | RFQ |
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| JAN1N4606 | joint army-navy specifications | semiconductor device diode | 81350 | NA | NA | Avl | RFQ | |
| RELEASE4999 | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 85.0 MAXIMUM REVERSE VOLTAGE,PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE4999 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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