ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-842-6181 (5961008426181). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961008426181 |
| Manufacturers | Adelco Elektronik Gmbh , Boonton Electronics Corporation , Control Data Systems Inc , Dare Electronics Inc , Freescale Semiconductor Inc , Gilbert Engineering Co Inc , Infineon Technologies , Joint Electron Device Engineering , Military Specifications , Raytheon Company , Rolm Corp |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-842-6181 (008426181) |
| NCB Code | USA (00) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 0050240311 | control data systems inc | semiconductor device diode | 34010 | a | a | Avl | RFQ |
|
| 108822-01 | rolm corp | semiconductor device diode | 14345 | a | f | Avl | RFQ |
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| 1N1522A | infineon technologies | semiconductor device diode | 81483 | a | a | Avl | RFQ |
|
| 1N3018A | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
|
| 1N3018A | joint electron device engineering | semiconductor device diode | 07688 | NA | NA | Avl | RFQ |
|
| 1N3018B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| 1N3018B | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
|
| 231051056 | dare electronics inc | semiconductor device diode | 55901 | a | a | Avl | RFQ |
|
| 4178600-173 | raytheon company | semiconductor device diode | 05869 | a | a | Avl | RFQ |
|
| 530125 | boonton electronics corporation | semiconductor device diode | 04901 | a | a | Avl | RFQ |
|
| JAN1N3018B-1 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| JAN1N3018BA | adelco elektronik gmbh | semiconductor device diode | c7191 | e | r | Avl | RFQ |
|
| JAN1N5237A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| JAN1N5237B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MILS19500-115B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| MZ8-2T10 | infineon technologies | semiconductor device diode | 81483 | a | a | Avl | RFQ |
|
| SV1011 | gilbert engineering co inc | semiconductor device diode | 03877 | a | a | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 31.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 115.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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