ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-865-2063 (5961008652063). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
Alternative NSN: | 5961008652063 |
Manufacturers | Adelco Elektronik Gmbh , Dla Land And Maritime , Freescale Semiconductor Inc , Infineon Technologies , Inspektorat Wsparcia Sil Zbrojnych , Joint Army-Navy Specifications , Joint Electron Device Engineering , Kearfott Corporation , Military Specifications , Motorola Inc , Racal Communications Systems Ltd , Raytheon Company , Te Ka De Felten , Thales Nederland Bv , Thales Uk Ltd , Yosemite Investment Inc |
Item Name | Semiconductor Device Diode |
INC Code | 20589 |
Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-865-2063 (008652063) |
NCB Code | USA (00) |
Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
---|---|---|---|---|---|---|---|---|
104 4114 156311 | te ka de felten | semiconductor device diode | d8770 | e | h | Avl | RFQ |
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10Z6-8T10 | infineon technologies | semiconductor device diode | 81483 | a | a | Avl | RFQ |
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JAN1N2970B | joint army-navy specifications | semiconductor device diode | 81350 | NA | NA | Avl | RFQ | |
JAN1N2970BA | adelco elektronik gmbh | semiconductor device diode | c7191 | e | r | Avl | RFQ |
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L03001 | dla land and maritime | semiconductor device diode | 16236 | a | a | Avl | RFQ |
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MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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MIL-S-19500/124 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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VBE890-1N2970B | thales nederland bv | semiconductor device diode | h0203 | f | a | Avl | RFQ |
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1N2970 | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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1N2970 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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1N2970A | yosemite investment inc | semiconductor device diode | 37942 | a | a | Avl | RFQ |
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1N2970A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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1N2970B | joint electron device engineering | semiconductor device diode | 07688 | NA | NA | Avl | RFQ |
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1N2970B | joint army-navy specifications | semiconductor device diode | 81350 | NA | NA | Avl | RFQ | |
1N2970B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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22-1845 | racal communications systems ltd | semiconductor device diode | k0215 | e | r | Avl | RFQ |
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22-1845 | thales uk ltd | semiconductor device diode | k0162 | e | a | Avl | RFQ |
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352250010038 | thales nederland bv | semiconductor device diode | h0203 | f | a | Avl | RFQ |
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4178600-379 | raytheon company | semiconductor device diode | 05869 | a | a | Avl | RFQ |
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48-14146A01 | motorola inc | semiconductor device diode | 94990 | a | r | Avl | RFQ |
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48-14146A01 | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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5961PL0991950 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | h | a | Avl | RFQ |
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G181-616-0022 | kearfott corporation | semiconductor device diode | 88818 | a | a | Avl | RFQ |
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JAN1N2970B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 60.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT,DC AND 250.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
MATT | MATERIAL | CERAMIC INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 1 SOLDER STUD AND 1 TAB,SOLDER LUG |
5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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