ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-950-6588. Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961009506588 |
| Manufacturers | Adelco Elektronik Gmbh , Allis Chalmers Corp , Bogue Electric Manufacturing Co , Eca Etablissement Central Des , General Electric Company , General Semiconductor Inc , Joint Army-Navy Specifications , Joint Electron Device Engineering , Kurz And Root Generator Company Llc , Military Specifications , Solitron Devices Inc , Thales Nederland Bv , Unisys Ltd , Ward Leonard Electric Company Inc |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-950-6588 (009506588) |
| NCB Code | USA (00) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 00-875-121-289 | allis chalmers corp | semiconductor device diode | 92392 | a | h | Avl | RFQ |
|
| 1N3996 | joint electron device engineering | semiconductor device diode | 07688 | NA | NA | Avl | RFQ |
|
| 1N3996 | general semiconductor inc | semiconductor device diode | 24444 | a | f | Avl | RFQ |
|
| 1N3996A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| 3522 500 10129 | thales nederland bv | semiconductor device diode | h0203 | f | a | Avl | RFQ |
|
| 5491338P1 | general electric company | semiconductor device diode | 08771 | a | a | Avl | RFQ |
|
| 5961009506588 | eca etablissement central des | semiconductor device diode | scy13 | m | r | Avl | RFQ |
|
| A38-0010 | kurz and root generator company llc | semiconductor device diode | 75377 | a | a | Avl | RFQ |
|
| C24386-2 | bogue electric manufacturing co | semiconductor device diode | 07860 | a | r | Avl | RFQ |
|
| DRC81221 | unisys ltd | semiconductor device diode | 09975 | a | a | Avl | RFQ |
|
| J94-0150 | ward leonard electric company inc | semiconductor device diode | 20019 | a | a | Avl | RFQ |
|
| JAN1N3996A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| JAN1N3996A | joint army-navy specifications | semiconductor device diode | 81350 | NA | NA | Avl | RFQ | |
| JAN1N3996AA | adelco elektronik gmbh | semiconductor device diode | c7191 | e | r | Avl | RFQ |
|
| MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| NS12006 | solitron devices inc | semiconductor device diode | 21845 | a | a | Avl | RFQ |
|
| VBE890-1N3996A | thales nederland bv | semiconductor device diode | h0203 | f | a | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| PRMT | PRECIOUS MATERIAL | GOLD OR SILVER |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 TAB,SOLDER LUG |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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