ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-00-950-9887 (5961009509887). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961009509887 |
| Manufacturers | Adelco Elektronik Gmbh , Airbus Defence And Space Limited , Alcatel Lucent , Bi Technologies Corporation , Edo Corporation , Eip Microwave Inc , Harris Corporation , Inspektorat Wsparcia Sil Zbrojnych , Leonardo Mw Ltd , Litton Systems Inc , Lockheed Martin Corporation , Military Specifications , Raytheon Company , Rohde And Schwarz Inc , Thales Electronic Systems Gmbh , Thales Nederland Bv |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-950-9887 (009509887) |
| NCB Code | USA (00) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 0846305 | rohde and schwarz inc | semiconductor device diode | d0894 | e | a | Avl | RFQ |
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| 1N827 | edo corporation | semiconductor device diode | 00752 | a | a | Avl | RFQ |
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| 1N827 | bi technologies corporation | semiconductor device diode | 73138 | a | a | Avl | RFQ |
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| 2700827-00 | eip microwave inc | semiconductor device diode | 34257 | a | f | Avl | RFQ |
|
| 352250009927 | thales nederland bv | semiconductor device diode | h0203 | f | a | Avl | RFQ |
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| 4178800-247 | raytheon company | semiconductor device diode | 05869 | a | a | Avl | RFQ |
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| 44371 50619 | thales electronic systems gmbh | semiconductor device diode | d8385 | e | a | Avl | RFQ |
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| 44397 28155 | thales electronic systems gmbh | semiconductor device diode | d8385 | e | a | Avl | RFQ |
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| 5961PL0911108 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | h | a | Avl | RFQ |
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| 7901093-03 | lockheed martin corporation | semiconductor device diode | 90536 | a | a | Avl | RFQ |
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| 933072120682 | alcatel lucent | semiconductor device diode | h0673 | e | a | Avl | RFQ |
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| 947060-8270 | litton systems inc | semiconductor device diode | 13973 | a | r | Avl | RFQ |
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| A32-9638-50 | leonardo mw ltd | semiconductor device diode | k0668 | f | a | Avl | RFQ |
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| AE0846305 | rohde and schwarz inc | semiconductor device diode | d0894 | e | a | Avl | RFQ |
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| G390217S1 | harris corporation | semiconductor device diode | 24930 | a | a | Avl | RFQ |
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| JAN1N827 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JAN1N827A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JAN1N827AA | adelco elektronik gmbh | semiconductor device diode | c7191 | e | r | Avl | RFQ |
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| MILS19500-159 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| Q62702Z606Z | airbus defence and space limited | semiconductor device diode | c0426 | e | a | Avl | RFQ |
|
| VBE890-1N827 | thales nederland bv | semiconductor device diode | h0203 | f | a | Avl | RFQ |
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| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.03 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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