ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-01-064-4875 (5961010644875). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961010644875 |
| Manufacturers | Bae Systems Inc , E2v Semiconductors , Electronic Industries Inc , Fairchild Semiconductor Corp , Freescale Semiconductor Inc , Hamilton Sundstrand Corporation , Honeywell International Inc , Inspektorat Wsparcia Sil Zbrojnych , Military Specifications , Raytheon Company , Rockwell Collins Aerospace , Telcom Semiconductor Inc |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-064-4875 (010644875) |
| NCB Code | USA (01) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 1076-316REVB | bae systems inc | semiconductor device diode | 72314 | a | a | Avl | RFQ |
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| 1299116-28 | honeywell international inc | semiconductor device diode | 19315 | a | a | Avl | RFQ |
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| 1951221-19 | honeywell international inc | semiconductor device diode | 19315 | a | a | Avl | RFQ |
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| 1N963A | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
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| 1N963B-1 | fairchild semiconductor corp | semiconductor device diode | 07263 | a | a | Avl | RFQ |
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| 1N963B-1JTX | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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| 353-2606-001 | rockwell collins aerospace | semiconductor device diode | 13499 | a | a | Avl | RFQ |
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| 353-8505-430 | rockwell collins aerospace | semiconductor device diode | 95105 | a | a | Avl | RFQ |
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| 418036-126 | raytheon company | semiconductor device diode | 96214 | a | a | Avl | RFQ |
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| 5961PL1454798 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | h | a | Avl | RFQ |
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| 5R4820-020-1002 | hamilton sundstrand corporation | semiconductor device diode | 73030 | a | a | Avl | RFQ |
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| BZX55C12 | e2v semiconductors | semiconductor device diode | f8385 | f | a | Avl | RFQ |
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| CD4117 | telcom semiconductor inc | semiconductor device diode | 15818 | a | f | Avl | RFQ |
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| CZL14JX963B1 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JAN-TX1N963B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JAN1N963B-1 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JANTX1N963B-1 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-PRF-19500/117 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-S-19500/117 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 160.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/117E GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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