ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-01-126-3009 (5961011263009). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961011263009 |
| Manufacturers | Avago Technologies Us Inc , Delco Electronics Corp , Freescale Semiconductor Inc , Hamilton Sundstrand Corporation , Hewlett-Packard Company , Inspektorat Wsparcia Sil Zbrojnych , Lockheed Martin Corporation , Microsemi Corporation , Military Specifications , Nimikkeistokeskus Ncb Finland , Raytheon Company , Rockwell Collins Aerospace , Telcom Semiconductor Inc |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-126-3009 (011263009) |
| NCB Code | USA (01) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 1-4M2-4AZ | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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| 10133275 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | h | a | Avl | RFQ |
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| 1900-3002 | avago technologies us inc | semiconductor device diode | 50434 | a | a | Avl | RFQ |
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| 1900-3002 | hewlett-packard company | semiconductor device diode | 28480 | a | a | Avl | RFQ |
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| 1902-3002 | hewlett-packard company | semiconductor device diode | 28480 | a | a | Avl | RFQ |
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| 353-8503-180 | rockwell collins aerospace | semiconductor device diode | 95105 | a | a | Avl | RFQ |
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| 418715-66 | raytheon company | semiconductor device diode | 96214 | a | a | Avl | RFQ |
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| 5961PL1262236 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | h | a | Avl | RFQ |
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| 5E4820 51 1001 | hamilton sundstrand corporation | semiconductor device diode | 73030 | a | a | Avl | RFQ |
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| 77C953324P79 | lockheed martin corporation | semiconductor device diode | 03538 | a | a | Avl | RFQ |
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| 7890071-201 | delco electronics corp | semiconductor device diode | 99974 | a | f | Avl | RFQ |
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| CD35526 | telcom semiconductor inc | semiconductor device diode | 15818 | a | f | Avl | RFQ |
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| CD35526 | microsemi corporation | semiconductor device diode | 14552 | a | r | Avl | RFQ |
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| JAN1N4370A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JANTX1N4370A | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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| JANTX1N4370A-1 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| ST7890071-201 | delco electronics corp | semiconductor device diode | 99974 | a | f | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.4 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 155.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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