ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-01-126-3010 (5961011263010). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
Alternative NSN: | 5961011263010 |
Manufacturers | Electronic Industries Inc , Freescale Semiconductor Inc , Inspektorat Wsparcia Sil Zbrojnych , Micro Uspd Inc , Military Specifications , Nimikkeistokeskus Ncb Finland , Rohde And Schwarz Inc |
Item Name | Semiconductor Device Diode |
INC Code | 20589 |
Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-126-3010 (011263010) |
NCB Code | USA (01) |
Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
---|---|---|---|---|---|---|---|---|
10133276 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | h | a | Avl | RFQ |
|
1N4970 | electronic industries inc | semiconductor device diode | 80131 | NA | NA | Avl | RFQ |
|
1N5364 | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
|
5961PL0190511 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | h | a | Avl | RFQ |
|
A713766 | rohde and schwarz inc | semiconductor device diode | 82199 | f | a | Avl | RFQ |
|
JANTX1N4970 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
JANTX1N4970M | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
JANTXV1N4970 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
MIL-PRF-19500/356 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
UZ5733 | micro uspd inc | semiconductor device diode | 12969 | a | a | Avl | RFQ |
|
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.145 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
AGAV | END ITEM IDENTIFICATION | INTEG COMM 76301; MULTIPLE LAUNCH ROCKET SYSTEM (MLRS) |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 33.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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