ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-01-126-5349 (5961011265349). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961011265349 |
| Manufacturers | Bae Systems Inc , Datron The Instruments Inc , Freescale Semiconductor Inc , Hamilton Sundstrand Corporation , Lockheed Martin Corporation , Military Specifications , Miltope Corporation , Nimikkeistokeskus Ncb Finland , Raytheon Company , Rockwell Collins Aerospace , Texas Instruments Inc , The Boeing Company |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-126-5349 (011265349) |
| NCB Code | USA (01) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 10133279 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | h | a | Avl | RFQ |
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| 1206449-2 | lockheed martin corporation | semiconductor device diode | 56232 | f | a | Avl | RFQ |
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| JANTX1N747 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JANTX1N747A-1 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| M24621 | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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| MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| QPL-JAN1N747A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| S57-7952 | miltope corporation | semiconductor device diode | 54418 | a | a | Avl | RFQ |
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| 353-2702-000 | the boeing company | semiconductor device diode | 81205 | a | a | Avl | RFQ |
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| 353-2974-000 | the boeing company | semiconductor device diode | 81205 | a | a | Avl | RFQ |
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| 353-2974-001 | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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| 353-2974-001 | texas instruments inc | semiconductor device diode | 01295 | a | a | Avl | RFQ |
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| 353-2974-001 | rockwell collins aerospace | semiconductor device diode | 95105 | a | a | Avl | RFQ |
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| 353-2974-002 | rockwell collins aerospace | semiconductor device diode | 13499 | a | a | Avl | RFQ |
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| 353-8503-220 | rockwell collins aerospace | semiconductor device diode | 13499 | a | a | Avl | RFQ |
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| 374-00079 | datron the instruments inc | semiconductor device diode | 13488 | a | f | Avl | RFQ |
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| 4907923-04 | lockheed martin corporation | semiconductor device diode | 90536 | a | a | Avl | RFQ |
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| 507523-2 | raytheon company | semiconductor device diode | 96214 | a | a | Avl | RFQ |
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| 5E4820 51-1005 | hamilton sundstrand corporation | semiconductor device diode | 73030 | a | a | Avl | RFQ |
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| 7538002P008 | bae systems inc | semiconductor device diode | 94117 | a | a | Avl | RFQ |
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| 99250-106 | lockheed martin corporation | semiconductor device diode | 49671 | a | h | Avl | RFQ |
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| G492096-611 | raytheon company | semiconductor device diode | 49956 | a | a | Avl | RFQ |
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| JAN1N747A | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JAN1N747A1 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AGAV | END ITEM IDENTIFICATION | 1430-01-080-7100 18876 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 110.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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