ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-01-182-3467 (5961011823467). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
| Alternative NSN: | 5961011823467 |
| Manufacturers | Avago Technologies Us Inc , Bae Systems Maritime Services , Fei Microwave Inc , General Dynamics Mission Systems , Graham Mfg Co Inc , Hewlett-Packard Company , International Rectifier Corporation , Kearfott Corporation , Mbda Incorporated , Military Specifications , Nimikkeistokeskus Ncb Finland , Northrop Grumman Systems Corporation , Raytheon Company , Rockwell Collins Aerospace , Trw Electronic Components |
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-182-3467 (011823467) |
| NCB Code | USA (01) |
| Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
|---|---|---|---|---|---|---|---|---|
| 019-004835-307 | northrop grumman systems corporation | semiconductor device diode | 26916 | a | a | Avl | RFQ |
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| 10133354 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | h | a | Avl | RFQ |
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| 1901-1095 | hewlett-packard company | semiconductor device diode | 28480 | a | a | Avl | RFQ |
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| 1901-1095 | avago technologies us inc | semiconductor device diode | 50434 | a | a | Avl | RFQ |
|
| 1N6391 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| 204-9000-220 | rockwell collins aerospace | semiconductor device diode | 95105 | a | a | Avl | RFQ |
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| 20FQ040 | international rectifier corporation | semiconductor device diode | 59993 | a | c | Avl | RFQ |
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| A14837 | mbda incorporated | semiconductor device diode | k0967 | e | a | Avl | RFQ |
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| A531A145-101 | kearfott corporation | semiconductor device diode | 88818 | a | a | Avl | RFQ |
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| FS141-5003-391H | bae systems maritime services | semiconductor device diode | k3902 | e | a | Avl | RFQ |
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| JAN1N6391 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
|
| JANTX1N6391 | raytheon company | semiconductor device diode | 49956 | a | a | Avl | RFQ |
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| JANTX1N6391 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| JANTX1N6391 | graham mfg co inc | semiconductor device diode | 07095 | a | r | Avl | RFQ |
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| MBR1540 | general dynamics mission systems | semiconductor device diode | 1vpw8 | f | a | Avl | RFQ |
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| MIL-PRF-19500/553 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-S-19500/553 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| MIL-S-195001553 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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| SD4138 | fei microwave inc | semiconductor device diode | 21847 | a | r | Avl | RFQ |
|
| SRD5137 | trw electronic components | semiconductor device diode | 01281 | a | f | Avl | RFQ |
|
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.437 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE AND 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES MAXIMUM FORWARD CURRENT,MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/553 GOVERNMENT SPECIFICATION |
| 5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
| 5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
| 5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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