ASAP Semiconductor is an industry-leading distributor for shopping for parts by National Stock Number (NSN) data, the items featured within this catalog all falling under NSN 5961-01-305-5270 (5961013055270). Toward the top of this page, you will find several details that pertain to this NSN, allowing you to confirm various aspects of these offerings to ensure accurate procurement. Meanwhile, the part numbers that we have available for purchase can be found below, with Request for Quote (RFQ) links provided alongside each should you wish to make a purchase. Our team is also available by phone or email to support you during the procurement process, so never hesitate to take the first step with us.
Alternative NSN: | 5961013055270 |
Manufacturers | Avago Technologies Us Inc , Freescale Semiconductor Inc , Gilbert Engineering Co Inc , Hewlett-Packard Company , Inspektorat Wsparcia Sil Zbrojnych , Joint Army-Navy Specifications , Microsemi Corporation , Military Specifications , Motorola Inc , Northrop Grumman Systems Corporation |
Item Name | Semiconductor Device Diode |
INC Code | 20589 |
Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-305-5270 (013055270) |
NCB Code | USA (01) |
Part No | Manufacturer | Item Name | CAGE Code | Type | Status | Availability | RFQ | |
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1081H30H18 | northrop grumman systems corporation | semiconductor device diode | 04804 | a | a | Avl | RFQ |
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1902-0791 | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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1902-0791 | avago technologies us inc | semiconductor device diode | 50434 | a | a | Avl | RFQ |
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1902-0791 | hewlett-packard company | semiconductor device diode | 28480 | a | a | Avl | RFQ |
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1N942 | gilbert engineering co inc | semiconductor device diode | 03877 | a | a | Avl | RFQ |
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1N942 | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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1N943 | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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1N943A | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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1N943B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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1N943B | microsemi corporation | semiconductor device diode | 12954 | a | h | Avl | RFQ |
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1N943B | joint army-navy specifications | semiconductor device diode | 81350 | NA | NA | Avl | RFQ | |
48P06463B001 | motorola inc | semiconductor device diode | 94990 | a | r | Avl | RFQ |
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5961PL0190549 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | h | a | Avl | RFQ |
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947060-9432 | northrop grumman systems corporation | semiconductor device diode | 06481 | a | a | Avl | RFQ |
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DT780822T | microsemi corporation | semiconductor device diode | 12954 | a | h | Avl | RFQ |
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JAN1N943B | joint army-navy specifications | semiconductor device diode | 81350 | NA | NA | Avl | RFQ | |
JAN1N943B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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JANTX1N943B-1 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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MIL-PRF-19500/157 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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MIL-S-19500/157 | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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SZG332H | freescale semiconductor inc | semiconductor device diode | 04713 | a | a | Avl | RFQ |
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TX1N943B | military specifications | semiconductor device diode | 81349 | NA | NA | Avl | RFQ |
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MRC | Criteria | Characteristic |
---|---|---|
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 11.7 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REFERENCE |
CBBL | FEATURES PROVIDED | QUALITY ASSURANCE LEVEL TX AND BURN IN |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
CTQX | CURRENT RATING PER CHARACTERISTIC | 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
5945-01-417-4215 (5945014174215) | 5935-01-075-6787 (5935010756787) | 5905-00-944-9222 (5905009449222) | 5998-01-244-8813 (5998012448813) |
5915-00-907-5624 (5915009075624) | 5950-00-965-9761 (5950009659761) | 5905-00-799-8794 (5905007998794) | 5910-00-405-8227 (5910004058227) |
5998-01-109-7002 (5998011097002) | 5940-01-284-2691 (5940012842691) | 5920-01-502-5817 (5920015025817) | 5905-00-969-6448 (5905009696448) |
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