Part Number : 312884 | Manufacturer : Bae Systems Inc | ||
NSN : 5962-01-578-3624 (5962015783624) | |||
Item Name : Microcircuit Memory | CAGE Code : 81413 | ||
NIIN : 01-578-3624 (015783624) | |||
FSC Code : 5962 Microcircuits Electronic | |||
FSG Code : 59 Electrical and Electronic Equipment Components | |||
INC Code : 41015 | |||
NCB Code : 01 | Country : USA |
Thank you for taking an interest in part number 312884, that of which is listed with the description Microcircuit Memory; Manufactured by Bae Systems Inc and listed alongside the NSN 5962015783624, part number 312884 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
Part Number : 312884 | Manufacturer : Bae Systems Inc | ||
NSN Number : 5962-01-578-3624 (5962015783624) | |||
Item Name : Microcircuit Memory | CAGE Code : 81413 | ||
NIIN : 015783624 | |||
FSC CODE : 5962 Microcircuits Electronic |
Thank you for taking an interest in part number 312884, that of which is listed with the description Microcircuit Memory; Manufactured by Bae Systems Inc and listed alongside the NSN 5962015783624, part number 312884 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-578-3624 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 015783624 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
312884 | 5 | 2 | 7 |
MRC | Criteria | Characteristic |
---|---|---|
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 303.0 MILLIWATTS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND MONOLITHIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | PAL |
ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
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