| Part Number : 8102403VA | Manufacturer : Harris Corporation | ||
| NSN : 5962-01-641-4210 (5962016414210) | |||
| Item Name : Microcircuit Memory | CAGE Code : 14304 | ||
| NIIN : 01-641-4210 (016414210) | |||
| FSC Code : 5962 Microcircuits Electronic | |||
| FSG Code : 59 Electrical and Electronic Equipment Components | |||
| INC Code : 41015 | |||
| NCB Code : 01 | Country : USA | ||
Thank you for taking an interest in part number 8102403VA, that of which is listed with the description Microcircuit Memory; Manufactured by Harris Corporation and listed alongside the NSN 5962016414210, part number 8102403VA is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
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| Part Number : 8102403VA | Manufacturer : Harris Corporation | ||
| NSN Number : 5962-01-641-4210 (5962016414210) | |||
| Item Name : Microcircuit Memory | CAGE Code : 14304 | ||
| NIIN : 016414210 | |||
| FSC CODE : 5962 Microcircuits Electronic | |||
Thank you for taking an interest in part number 8102403VA, that of which is listed with the description Microcircuit Memory; Manufactured by Harris Corporation and listed alongside the NSN 5962016414210, part number 8102403VA is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-641-4210 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 016414210 | N | B | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| B | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 8102403VA | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND ELECTROSTATIC SENSITIVE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CSWJ | WORD QUANTITY | 4096" |
| CWSG | TERMINAL SURFACE TREATMENT | TIN" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY IC" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 220.0 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| CZZZ | MEMORY CAPACITY | 4K" |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PIN" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND ELECTROSTATIC SENSITIVE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CSWJ | WORD QUANTITY | 4096" |
| CWSG | TERMINAL SURFACE TREATMENT | TIN" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY IC" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 220.0 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| CZZZ | MEMORY CAPACITY | 4K" |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PIN" |
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