Part Number : 2104 S1234 | Manufacturer : Intel Corporation | ||
NSN : 5962-01-094-9069 (5962010949069) | |||
Item Name : Microcircuit Memory | CAGE Code : 34649 | ||
NIIN : 01-094-9069 (010949069) | |||
FSC Code : 5962 Microcircuits Electronic | |||
FSG Code : 59 Electrical and Electronic Equipment Components | |||
NCB Code : 01 | Country : USA |
Thank you for taking an interest in part number 2104 S1234, that of which is listed with the description Microcircuit Memory; Manufactured by Intel Corporation and listed alongside the NSN 5962010949069, part number 2104 S1234 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
Part Number : 2104 S1234 | Manufacturer : Intel Corporation | ||
NSN Number : 5962-01-094-9069 (5962010949069) | |||
Item Name : Microcircuit Memory | CAGE Code : 34649 | ||
NIIN : 010949069 | |||
FSC CODE : 5962 Microcircuits Electronic |
Thank you for taking an interest in part number 2104 S1234, that of which is listed with the description Microcircuit Memory; Manufactured by Intel Corporation and listed alongside the NSN 5962010949069, part number 2104 S1234 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-094-9069 Item Description: MICROCIRCUIT,MEMORY | 5962 | 010949069 | N | |||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
2104(S1234) | 3 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
CZEQ | Time Rating Per Chacteristic | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
AFJQ | Storage Temp Range | -55.0/+150.0 DEG CELSIUS |
CZER | Memory Device Type | ROM |
CQZP | Input Circuit Pattern | 10 INPUT |
ADAT | Body Width | 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
CQSJ | Inclosure Material | CERAMIC |
TEST | Test Data Document | 21101-49A0295 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
MRC | Decoded Requirement | Clear Text Reply |
TTQY | Terminal Type And Quantity | 16 PRINTED CIRCUIT |
CWSG | Terminal Surface Treatment | SOLDER |
CBBL | Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC AND W/STROBE AND W/ENABLE |
ADAQ | Body Length | 0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM |
AEHX | Maximum Power Dissipation Rating | 1.25 WATTS |
ADAU | Body Height | 0.185 INCHES MAXIMUM |
AFGA | Operating Temp Range | +0.0/+70.0 DEG CELSIUS |
CQSZ | Inclosure Configuration | DUAL-IN-LINE |
CQWX | Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE |
CZZZ | Memory Capacity | UNKNOWN |
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