| Part Number : 2N6508G | Manufacturer : Littlefuse World Hq | ||
| NSN : 5961-01-267-2280 (5961012672280) | |||
| Item Name : Semiconductor Device Thyristor | CAGE Code : 5FWY4 | ||
| NIIN : 01-267-2280 (012672280) | |||
| FSC Code : 5961 Semiconductor Devices and Associated Hardware | |||
| FSG Code : 59 Electrical and Electronic Equipment Components | |||
| INC Code : 33096 | |||
| NCB Code : 01 | Country : USA | ||
Thank you for taking an interest in part number 2N6508G, that of which is listed with the description Semiconductor Device Thyristor; Manufactured by Littlefuse World Hq and listed alongside the NSN 5961012672280, part number 2N6508G is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
| Part Number : 2N6508G | Manufacturer : Littlefuse World Hq | ||
| NSN Number : 5961-01-267-2280 (5961012672280) | |||
| Item Name : Semiconductor Device Thyristor | CAGE Code : 5FWY4 | ||
| NIIN : 012672280 | |||
| FSC CODE : 5961 Semiconductor Devices and Associated Hardware | |||
Thank you for taking an interest in part number 2N6508G, that of which is listed with the description Semiconductor Device Thyristor; Manufactured by Littlefuse World Hq and listed alongside the NSN 5961012672280, part number 2N6508G is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-267-2280 Item PartTypeName: SEMICONDUCTOR DEVICE,THYRISTOR | 5961 | 012672280 | 0 | N | A | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | A | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 2N6508 | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL AND PLASTIC |
| ABHP | OVERALL LENGTH | 16.51 MILLIMETERS MAXIMUM |
| ABJT | TERMINAL LENGTH | 14.73 MILLIMETERS MAXIMUM |
| ABKW | OVERALL HEIGHT | 4.82 MILLIMETERS MAXIMUM |
| ABMK | OVERALL WIDTH | 10.66 MILLIMETERS MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES FORWARD CURRENT,TOTAL RMS HORSEPOWER METRIC AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 129.0 DEG CELSIUS CASE |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
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