| Part Number : 219-033-002-01 | Manufacturer : Mcdonnell Douglas Aerospace | ||
| NSN : 5962-01-276-4794 (5962012764794) | |||
| Item Name : Microcircuit Memory | CAGE Code : 0WW65 | ||
| NIIN : 01-276-4794 (012764794) | |||
| FSC Code : 5962 Microcircuits Electronic | |||
| FSG Code : 59 Electrical and Electronic Equipment Components | |||
| INC Code : 41015 | |||
| NCB Code : 01 | Country : USA | ||
| Alternate P/N: 21903300201 | |||
Thank you for taking an interest in part number 219-033-002-01, that of which is listed with the description Microcircuit Memory; Manufactured by Mcdonnell Douglas Aerospace and listed alongside the NSN 5962012764794, part number 219-033-002-01 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
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| Part Number : 219-033-002-01 | Manufacturer : Mcdonnell Douglas Aerospace | ||
| NSN Number : 5962-01-276-4794 (5962012764794) | |||
| Item Name : Microcircuit Memory | CAGE Code : 0WW65 | ||
| NIIN : 012764794 | |||
| FSC CODE : 5962 Microcircuits Electronic | |||
Thank you for taking an interest in part number 219-033-002-01, that of which is listed with the description Microcircuit Memory; Manufactured by Mcdonnell Douglas Aerospace and listed alongside the NSN 5962012764794, part number 219-033-002-01 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
| MRC | Criteria | Characteristic |
|---|---|---|
| CZEQ | Time Rating Per Chacteristic | 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
| CZER | Memory Device Type | ROM |
| ADAT | Body Width | 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
| CQZP | Input Circuit Pattern | 6 INPUT |
| CQSJ | Inclosure Material | CERAMIC |
| CWSG | Terminal Surface Treatment | SOLDER |
| TTQY | Terminal Type And Quantity | 16 PRINTED CIRCUIT |
| CBBL | Features Provided | PROGRAMMABLE AND W/OPEN COLLECTOR AND HERMETICALLY SEALED |
| ADAQ | Body Length | 0.870 INCHES MAXIMUM |
| AEHX | Maximum Power Dissipation Rating | 325.0 MILLIWATTS |
| ADAU | Body Height | 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM |
| AFGA | Operating Temp Range | -0.0/+70.0 DEG CELSIUS |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| MRC | Decoded Requirement | Clear Text Reply |
| CZEN | Voltage Rating And Type Per Characteristic | 5.0 VOLTS MAXIMUM POWER SOURCE |
| CQWX | Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
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