Part Number : GC43341-30 | Manufacturer : Microsemi Corporation | ||
NSN : 5961-01-356-4289 (5961013564289) | |||
Item Name : Semiconductor Device Diode | CAGE Code : 50101 | ||
NIIN : 01-356-4289 (013564289) | |||
FSC Code : 5961 Semiconductor Devices and Associated Hardware | |||
FSG Code : 59 Electrical and Electronic Equipment Components | |||
INC Code : 20589 | |||
NCB Code : 01 | Country : USA | ||
Alternate P/N: GC4334130 |
Thank you for taking an interest in part number GC43341-30, that of which is listed with the description Semiconductor Device Diode; Manufactured by Microsemi Corporation and listed alongside the NSN 5961013564289, part number GC43341-30 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
Part Number : GC43341-30 | Manufacturer : Microsemi Corporation | ||
NSN Number : 5961-01-356-4289 (5961013564289) | |||
Item Name : Semiconductor Device Diode | CAGE Code : 50101 | ||
NIIN : 013564289 | |||
FSC CODE : 5961 Semiconductor Devices and Associated Hardware |
Thank you for taking an interest in part number GC43341-30, that of which is listed with the description Semiconductor Device Diode; Manufactured by Microsemi Corporation and listed alongside the NSN 5961013564289, part number GC43341-30 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-356-4289 Item PartTypeName: SEMICONDUCTOR DEVICE,DIODE | 5961 | 013564289 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | G | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
142845-0002 | C | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING |
PRMT | PRECIOUS MATERIAL | GOLD |
ABJT | TERMINAL LENGTH | 0.060 INCHES MINIMUM AND 0.064 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.118 INCHES MINIMUM AND 0.127 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | BURN IN AND GOLD PLATED LEADS AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 240.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: NIP |
MATT | MATERIAL | CERAMIC INCLOSURE |
PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |
ABHP | OVERALL LENGTH | 0.085 INCHES MINIMUM AND 0.097 INCHES MAXIMUM |
CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
CTRD | POWER RATING PER CHARACTERISTIC | 12.5 WATTS MAXIMUM FORWARD POWER DISSIPATION,DC |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
AXGY | MOUNTING METHOD | TERMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 2 FERRULE |
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