| Part Number : MKB4118-3 | Manufacturer : St Microelectronics Ltd | ||
| NSN : 5962-01-113-7050 (5962011137050) | |||
| Item Name : Microcircuitmemory | CAGE Code : 50088 | ||
| NIIN : 01-113-7050 (011137050) | |||
| FSC Code : 5962 Microcircuits Electronic | |||
| FSG Code : 59 Electrical and Electronic Equipment Components | |||
| INC Code : 41015 | |||
| NCB Code : 01 | Country : USA | ||
| Alternate P/N: MKB41183 | |||
Thank you for taking an interest in part number MKB4118-3, that of which is listed with the description Microcircuitmemory; Manufactured by St Microelectronics Ltd and listed alongside the NSN 5962011137050, part number MKB4118-3 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
| Part Number : MKB4118-3 | Manufacturer : St Microelectronics Ltd | ||
| NSN Number : 5962-01-113-7050 (5962011137050) | |||
| Item Name : Microcircuitmemory | CAGE Code : 50088 | ||
| NIIN : 011137050 | |||
| FSC CODE : 5962 Microcircuits Electronic | |||
Thank you for taking an interest in part number MKB4118-3, that of which is listed with the description Microcircuitmemory; Manufactured by St Microelectronics Ltd and listed alongside the NSN 5962011137050, part number MKB4118-3 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
| MRC | Criteria | Characteristic |
|---|---|---|
| CZEQ | Time Rating Per Chacteristic | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
| CQZP | Input Circuit Pattern | 18 INPUT |
| TEST | Test Data Document | 13973-839201-0018 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CQSJ | Inclosure Material | CERAMIC |
| MRC | Decoded Requirement | Clear Text Reply |
| TTQY | Terminal Type And Quantity | 24 PRINTED CIRCUIT |
| ADAT | Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CBBL | Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED |
| CWSG | Terminal Surface Treatment | SOLDER |
| ADAQ | Body Length | 1.290 INCHES MAXIMUM |
| AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
| ADAU | Body Height | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| CTFT | Case Outline Source And Designator | D-3 MIL-M-38510 |
| AFGA | Operating Temp Range | +0.0/+70.0 DEG CELSIUS |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| CZER | Memory Device Type | RAM |
| CZEN | Voltage Rating And Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CQWX | Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
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