| Part Number : 49A0295-000 | Manufacturer : Unisys Ltd | ||
| NSN : 5962-01-094-9069 (5962010949069) | |||
| Item Name : Microcircuit Memory | CAGE Code : 4S536 | ||
| NIIN : 01-094-9069 (010949069) | |||
| FSC Code : 5962 Microcircuits Electronic | |||
| FSG Code : 59 Electrical and Electronic Equipment Components | |||
| NCB Code : 01 | Country : USA | ||
| Alternate P/N: 49A0295000 | |||
Thank you for taking an interest in part number 49A0295-000, that of which is listed with the description Microcircuit Memory; Manufactured by Unisys Ltd and listed alongside the NSN 5962010949069, part number 49A0295-000 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
| Part Number : 49A0295-000 | Manufacturer : Unisys Ltd | ||
| NSN Number : 5962-01-094-9069 (5962010949069) | |||
| Item Name : Microcircuit Memory | CAGE Code : 4S536 | ||
| NIIN : 010949069 | |||
| FSC CODE : 5962 Microcircuits Electronic | |||
Thank you for taking an interest in part number 49A0295-000, that of which is listed with the description Microcircuit Memory; Manufactured by Unisys Ltd and listed alongside the NSN 5962010949069, part number 49A0295-000 is available for immediate purchase on our website. As such, to learn more about this offering while receiving a competitive quote for your comparisons, be sure to fill out and submit the RFQ form presented on this page. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will contact you to present a tailored solution for your comparisons.
| MRC | Criteria | Characteristic |
|---|---|---|
| CZEQ | Time Rating Per Chacteristic | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ | Storage Temp Range | -55.0/+150.0 DEG CELSIUS |
| CZER | Memory Device Type | ROM |
| CQZP | Input Circuit Pattern | 10 INPUT |
| ADAT | Body Width | 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQSJ | Inclosure Material | CERAMIC |
| TEST | Test Data Document | 21101-49A0295 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| MRC | Decoded Requirement | Clear Text Reply |
| TTQY | Terminal Type And Quantity | 16 PRINTED CIRCUIT |
| CWSG | Terminal Surface Treatment | SOLDER |
| CBBL | Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC AND W/STROBE AND W/ENABLE |
| ADAQ | Body Length | 0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM |
| AEHX | Maximum Power Dissipation Rating | 1.25 WATTS |
| ADAU | Body Height | 0.185 INCHES MAXIMUM |
| AFGA | Operating Temp Range | +0.0/+70.0 DEG CELSIUS |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| CQWX | Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE |
| CZZZ | Memory Capacity | UNKNOWN |
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