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Infineon Introduces 800V CoolMOS MosFETs Superjunction Technology

800V CoolMOS MosFETs Superjection Technology

Based on the Superjunction technology, Infineon welcomes the latest addition to its family the 800V CoolMOS P7 series of 800V MosFETs. This will be available in twelve R DS(on) classes with six packages to fully address the target application of needs. While Infineon has been focusing on flyback topologies as of late which are found in standard applications like LED lighting, industrial/auxiliary power, audio and adapter, the latest introduction is for low power SMPS applications with products like R DS(on) of 280 mO, 450 mO, 1400 mO and 4500 mO now available for order.

The 800 V CoolMOS P7 series offers a combination of optimized device parameters that will offer up to 0.6% efficiency gain translating into 2 to 8 °C lower MOSFET temperature found in the CoolMOS C3. There is also a 50% in E oss and Q g, as well as a reduced C iss and C oss allowing for higher power density designs, lower switching losses and better DPAK R DS(on) products which will allow customers to reduce BOM costs and provide minimal assembly. An integrated Zener Diode will significantly improve ESD ruggedness but dramatically reduces eSD related production yield loss. Easy to drive and easier to design due to the V (GS)th of 3 V and the smallest V GS(th) variation of only ±0.5 V which will allow for lower driving voltage/ switching losses.


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